HYDROGEN CONCENTRATION ANALYSIS IN SEQUENTIALLY DEPOSITED THIN FILMS AND APPLICATION OF SURFACE CHARGE ANALYSIS TECHNIQUE FOR FAST AND NON-DESTRUCTIVE CHARACTERIZATION OF PECVD SILICON NITRIDE
As parts of silicon nitride PECVD process optimization, a SIMS hydrogen concentration analysis in sequentially deposited CVD layers used for device manufacturing, and trends of the average total charge changes measured using surface charge analysis technique in the silicon nitride layer are analyzed.
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