• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文会议>International VLSI multilevel interconnection conference;VMIC >STI CMP Defect Reduction with Slurry Filtration
【24h】

STI CMP Defect Reduction with Slurry Filtration

机译：浆料过滤减少STI CMP缺陷

获取原文
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Shallow trench isolation (STI) process has been used widely for deep-0.25μm technologies. Shallow trench isolation chemical mechanical polishing (STI CMP) is a critical part of the process module. Global planarization is an advantage for STI CMP; however, there is a significant challenge in STI CMP - defect reduction. One major type of defect associated with STI CMP is micro-scratching. Several process parameters have been flexed to identify the potential causes of the micro-scratch. A systematic baseline study of the slurry distribution system has been performed. Due to slurry agglomeration, large particles were found in the slurry before reaching the polisher. A thorough study of slurry filtration was conducted. A significant reduction in overall defect counts and number of micro-scratches was observed for the tool with Solaris?point-of-use (POU) filtration installed. Two stages slurry filtration, in the recirculation loop and POU, was online. Process parameter monitoring was used to extend the lifetime of the POU filter. A discussion for improving the lifetime of the POU filter is presented in the paper. As a result, the lifetime of the POU filter was increased 200% ～ 300%.
机译：浅沟槽隔离（STI）工艺已广泛用于0.25μm深技术。浅沟槽隔离化学机械抛光（STI CMP）是工艺模块的关键部分。全局平面化是STI CMP的优势;但是，STI CMP面临着巨大的挑战-减少缺陷。与STI CMP相关的一种主要缺陷类型是微划痕。几种工艺参数已经确定，以识别微划痕的潜在原因。已对浆液分配系统进行了系统的基线研究。由于浆料的团聚，在到达抛光机之前，在浆料中发现了大颗粒。对浆料过滤进行了彻底的研究。对于安装了Solaris使用点（POU）过滤的工具，发现该工具的总体缺陷数和微划痕数量显着减少。在线进行了在再循环回路和POU中的两阶段浆液过滤。使用过程参数监视来延长POU过滤器的寿命。本文讨论了如何改善POU滤波器的寿命。结果，POU过滤器的寿命增加了200％〜300％。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号