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TECHNOLOGY AND DESIGN CHALLENGES FOR LOW POWER AND HIGH PERFORMANCE MICROPROCESSORS

机译:低功耗,高性能微处理器的技术和设计挑战

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We discuss key barriers to continued scaling of supply voltage and technology for microprocessors to achieve low power and high-performance. In particular, we focus on short-channel effects, device parameter variations, excessive suhthreshold and gate oxide leakage, as the main obstacles dictated by fundamental device physics. Functionality of special circuits in the presence of high leakage, SRAM cell stability, bit line delay scaling, and power consumption in clocks & interconnects, will be the primary design challenges in the future. Soft error rate control and power delivery pose additional challenges. All of these problems are further compounded by the rapidly escalating complexity of microprocessor designs. The excessive leakage problem is particularly severe for battery-operated, high-performance microprocessors.
机译:我们讨论了继续扩展电源电压的关键障碍以及微处理器实现低功耗和高性能的技术。特别地,我们关注于短沟道效应,器件参数变化,过高的阈值和栅氧化层泄漏,这是基本器件物理学所规定的主要障碍。在存在高泄漏,SRAM单元稳定性,位线延迟缩放以及时钟和互连功耗的情况下,特殊电路的功能将是未来的主要设计挑战。软错误率控制和功率传输带来了其他挑战。所有这些问题都由于微处理器设计的迅速升级复杂性而变得更加复杂。对于电池供电的高性能微处理器而言,过多的泄漏问题尤其严重。

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