The Effect of Metal Layer Photo Rework to Etch Residue Formation and Solution

机译：金属层照片返工对蚀刻残留物形成和溶解的影响

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In metal layer photo rework process, developer reacts with aluminum through ARC (TiN) to form Al_xO_y by-products. Etching rate of Al_xO_y by-products is relatively lower than aluminum, and act as etching mask to form etch residues. Metal etch residue can not be improved if a consecutive wet striping process is performed. Etch residues are suppressed by adding a dry-ashing process before wet striping process. The O_2 plasma treatment seals the ARC weak point and prevents the formation of Al_xO_y by-product from penetrated developer solution.

机译：在金属层的照片返工过程中，显影剂通过ARC（TiN）与铝发生反应，形成Al_xO_y副产物。 Al_xO_y副产物的蚀刻速率相对低于铝，并且充当蚀刻掩模以形成蚀刻残留物。如果执行连续的湿法剥离工艺，则无法改善金属蚀刻残留物。通过在湿法剥离工艺之前添加干法灰化工艺来抑制蚀刻残留物。 O_2等离子体处理可密封ARC弱点，并防止渗透的显影剂溶液形成Al_xO_y副产物。

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《International VLSI multilevel interconnection conference;VMIC》|2000年|p.326-328|共3页
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Yin-Fu Huang; Albert J. Chiou; N. T. Lian; S. S. Hwu; Pony Liu;
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中图分类无线电电子学、电信技术;
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The Effect of Metal Layer Photo Rework to Etch Residue Formation and Solution

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