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首页> 外文会议>International VLSI multilevel interconnection conference;VMIC >The Influence of Post Etching Cleaning on the Stop Layer Damage for Dual Damascene Etch
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The Influence of Post Etching Cleaning on the Stop Layer Damage for Dual Damascene Etch

机译：蚀刻后清洗对双金属镶嵌蚀刻停止层损伤的影响

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During the Cu/dielectric damascene etch, the lateral etching of silicon nitride stop layer after wet clean is often observed. This recess of silicon nitride is a concern which may deteriorate the following barrier metallization process. An analytical testing of blanket silicon nitride wafers has shown that there is a significant change in the structure of the surface of silicon nitride which is up to 50～80 angstrom into the subsurface layer during the dry cleaning and photoresist stripping process. This dry cleaning process induces a severe oxidation of the silicon nitride that creates a low density, high oxygen content silicon-oxynitride that is susceptible to etching away by the following wet clean process if it is fluorine containing material. The etch rate of this oxidized SiN appears to correspond to the silicon nitride loss seen from SEM. When the same testing is performed on the silicon nitride as deposited or after dry etching process only, this erosion is not observed.
机译：在铜/介电金属镶嵌蚀刻期间，经常观察到湿法清洁后氮化硅停止层的横向蚀刻。氮化硅的这种凹陷是一个问题，它可能会使随后的势垒金属化工艺恶化。毯式氮化硅晶片的分析测试表明，在干洗和光致抗蚀剂剥离过程中，氮化硅表面的表面结构发生了显着变化，直至进入亚表层的深度达到了50〜80埃。该干洗工艺引起氮化硅的严重氧化，从而产生低密度，高氧含量的氮氧化硅，如果其​​为含氟材料，则易于通过随后的湿法清洁工艺蚀刻掉。该氧化的SiN的蚀刻速率似乎对应于从SEM观察到的氮化硅损失。当对沉积的氮化硅或仅在干法蚀刻工艺之后进行相同的测试时，未观察到这种腐蚀。

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