首页> 外文会议>International VLSI multilevel interconnection conference;VMIC >TRIBOLOGY, FLUID DYNAMICS AND REMOVAL RATE CHARACTERIZATION OF NOVEL SLURRIES FOR ILD POLISH APPLICATIONS
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TRIBOLOGY, FLUID DYNAMICS AND REMOVAL RATE CHARACTERIZATION OF NOVEL SLURRIES FOR ILD POLISH APPLICATIONS

机译:用于ILD抛光应用的新型稀浆的摩擦学,流体动力学和去除速率表征

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This study focused on characterizing cerium oxide and silica-alumina based ILD polish slurries in terms of their tribology, fluid dynamics behavior and ability to remove silicon dioxide (SiO_2) and silicon nitride (Si_3N_4) films. The methods used in these studies were real-time frictional force analysis, as well as real-time dual emission UV-enhanced fluorescence during polish. It was found that: 1. The values of COF associated with cerium oxide and silica-alumina abrasives were nearly the same. 2. The tribological mechanism associated with cerium oxide and silica-alumina abrasives was shown to be asperity contact between the wafer and the pad with the abrasive particles participating in the overall polish by acting as roller bearings. 3. One-percent cerium oxide slurry yielded the same COF as 10-percent silica slurry. 4. In the case of cerium oxide slurries without additives, COF was the same regardless of the type of film being polished. When additive was present, COF was approximately 25% lower for silicon nitride wafers compared to silicon dioxide wafers. 5. The above COF differences were used to explain the observed 100-to-1 selectivity between silicon dioxide and silicon nitride surfaces. 6. A preliminary model based on electrostatic forces was presented which qualitatively explained the above trends the results obtained with the anionic additive. 7. Mean residence time was shown to vary with slurry flow rate and platen speed in manner consistent will well-established chemical engineering reactor design theories. 8. Mean residence time was shown to strongly depend on cerium oxide abrasive concentration and presence of anionic organic additive. 9. A preliminary fluid dynamics model was developed which helped explain these trends and supported earlier findings on the effect of additives on COF. 10. It was shown that surface texture of the pad (due to perforation or grooving) significantly affected mean residence time. This effect was explained by taking into account the macro-void volume associated with each pad and applying it to the classical definition of mean residence time. 11. Silica abrasives with varying alumina content (both in magnitude and location), mean aggregate size, primary particle size and degree of structure were shown to significantly affect Preston Constant during ILD polish. Due to experimental confounding, the relative contribution of each of these parameters with respect to removal rate was unclear.
机译:这项研究专注于表征基于氧化铈和二氧化硅-氧化铝的ILD抛光浆料的摩擦学,流体动力学行为以及去除二氧化硅(SiO_2)和氮化硅(Si_3N_4)膜的能力。这些研究中使用的方法是实时摩擦力分析,以及抛光过程中实时双发射紫外线增强的荧光。发现:1.与氧化铈和二氧化硅-氧化铝磨料相关的COF值几乎相同。 2.与氧化铈和二氧化硅-氧化铝磨料有关的摩擦学机理被证明是晶片和抛光垫之间的粗糙接触,而磨料颗粒通过充当滚子轴承参与了整体抛光。 3. 1%的氧化铈浆料产生的COF与10%的二氧化硅浆料相同。 4.对于不含添加剂的氧化铈浆料,无论抛光膜的类型如何,COF均相同。当存在添加剂时,与二氧化硅晶片相比,氮化硅晶片的COF降低约25%。 5.上述COF差异用于解释观察到的二氧化硅和氮化硅表面之间100:1的选择性。 6.提出了一个基于静电力的初步模型,该模型定性地解释了上述趋势,使用阴离子添加剂获得的结果。 7.平均停留时间显示出随着浆液流速和压板速度的变化而变化,其方式将与公认的化学工程反应器设计理论相一致。 8.显示平均停留时间在很大程度上取决于二氧化铈磨料的浓度和阴离子有机添加剂的存在。 9.建立了初步的流体动力学模型,该模型有助于解释这些趋势,并支持有关添加剂对COF的影响的早期发现。 10.表明垫的表面质地(由于穿孔或开槽)显着影响平均停留时间。通过考虑与每个垫相关的大孔隙体积并将其应用于平均停留时间的经典定义来解释这种效果。 11.在ILD抛光过程中,氧化铝含量(大小和位置),平均聚集体尺寸,初级颗粒尺寸和结构程度不同的二氧化硅磨料已显示出对普雷斯顿常数的显着影响。由于实验混杂,尚不清楚这些参数中的每一个相对于去除率的相对贡献。

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