AL~+ and N~+ implantation in silicon carbide: a role of point defect clusters in defect evolution

机译：碳化硅中的AL〜+和N〜+注入：点缺陷簇在缺陷演化中的作用

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The diffusion processes in silicon carbide under Al~+ and N~+ ion implantation and subsequent annealing have been investigated. The influence of an internal stress field due to point defect clusters has been taken into account. The clusters of interstitials, ions, and impurities have been created during irradiation. The compression stress field due to these complexes has decreased the diffusion of interstitials. The defect profiles have been calculated which have been in good agreement with experimental RBS/C results.

机译：研究了Al〜+和N〜+离子注入过程中碳化硅的扩散过程以及随后的退火过程。已经考虑了由于点缺陷簇而引起的内部应力场的影响。间隙，离子和杂质的簇已在辐照过程中产生。由于这些复合物引起的压缩应力场降低了间隙的扩散。计算出的缺陷轮廓与实验RBS / C结果非常吻合。

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《Nondestructive Testing and Computer Simulations in Science and Engineering》|2001年|p.257-263|共7页
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Peter V. Rybin; Dmitry V. Kulikov; Yury V. Trushin; Joerg Petzoldt;
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中图分类一般工业技术;
关键词
clusters; defect; diffusion; elastic stress fields; ion implantation; point defects;

机译：集群缺陷;扩散;弹性应力场离子注入点缺陷;

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4. AL~+ and N~+ implantation in silicon carbide: a role of point defect clusters in defect evolution [C] . Joerg Petzoldt, Yury V. Trushin, Dmitry V. Kulikov, International workshop on nondestructive testing and computer simulations in science and engineering . 2001

机译：碳化硅中的Al〜+和N〜+植入：点缺陷簇在缺陷演化中的作用
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AL~+ and N~+ implantation in silicon carbide: a role of point defect clusters in defect evolution

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