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DEFECT CHECKUP METHOD FOR SILICON CARBIDE BULK MONOCRYSTALLINE SUBSTRATES, DEFECT CHECKUP SYSTEM FOR SILICON CARBIDE BULK MONOCRYSTALLINE SUBSTRATES USING THIS METHOD, AND SILICON CARBIDE BULK MONOCRYSTALLINE SUBSTRATE WITH DEFECT INFORMATION
DEFECT CHECKUP METHOD FOR SILICON CARBIDE BULK MONOCRYSTALLINE SUBSTRATES, DEFECT CHECKUP SYSTEM FOR SILICON CARBIDE BULK MONOCRYSTALLINE SUBSTRATES USING THIS METHOD, AND SILICON CARBIDE BULK MONOCRYSTALLINE SUBSTRATE WITH DEFECT INFORMATION
PROBLEM TO BE SOLVED: To provide a substrate defect checkup method permitting detection of 6H type lamination defects contained in nitrogen-doped 4H type SiC bulk monocrystalline substrates, a substrate defect checkup system using this method, and an SiC bulk monocrystalline substrate with defect information.;SOLUTION: A defect checkup method for SiC bulk monocrystalline substrates whereby a photoluminescence image on a longer wavelength side is obtained by irradiating the surface of a substrate with ultraviolet rays of not less than 200 nm but not more than 390 nm in wavelength and intercepting at least light rays of less than 600 nm from the photoluminescence light radiating and obtained from the substrate, and any brighter region than the adjacent regions identified from differences in relative luminance among adjacent regions is determined to be a defective area containing a 6H type lamination defect; a defect checkup system for substrates using this method, and a SiC bulk monocrystalline substrate with defect information thereby obtained.;COPYRIGHT: (C)2012,JPO&INPIT
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