首页> 外国专利> SILICON CARBIDE SEMICONDUCTOR SUBSTRATE, METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR SUBSTRATE, SILICON CARBIDE SEMICONDUCTOR BULK CRYSTAL, METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR BULK CRYSTAL, SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE

SILICON CARBIDE SEMICONDUCTOR SUBSTRATE, METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR SUBSTRATE, SILICON CARBIDE SEMICONDUCTOR BULK CRYSTAL, METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR BULK CRYSTAL, SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE

机译：碳化硅半导体基质，制造碳化硅半导体基质的方法，碳化硅半导体本体晶体，制造碳化硅半导体本体材料，碳化硅半导体材料的方法

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摘要

PROBLEM TO BE SOLVED: To provide a device, made from silicon carbide, in which the density of crystal defects which may cause the reduction of yield of a device is reduced.;SOLUTION: The method of manufacturing silicon carbide semiconductor substrate 10 includes: (a) a step of preparing the silicon carbide substrate 1; (b) a step of forming a first epitaxial layer 5 on the silicon carbide substrate 1; (c) a step of specifying positions of crystal defects 4 which has occurred on the first epitaxial layer 5; (d) a step of etching the substrate so as to reduce the first epitaxial layer 5 at the specified position and to form a trench 21 on the silicon carbide substrate 1; and (e) a step of forming a second epitaxial layer 2 on the first epitaxial layer 5 and the silicon carbide substrate 1.;COPYRIGHT: (C)2009,JPO&INPIT

机译：解决的问题：提供一种由碳化硅制成的器件，其中减小了可能导致器件成品率降低的晶体缺陷的密度。解决方案：制造碳化硅半导体衬底10的方法包括：（ a）准备碳化硅衬底1的步骤; （b）在碳化硅衬底1上形成第一外延层5的步骤; （c）确定在第一外延层5上产生的晶体缺陷4的位置的步骤; （d）蚀刻基板的步骤，以在指定位置处减小第一外延层5并在碳化硅基板1上形成沟槽21; （e）在第一外延层5和碳化硅衬底1上形成第二外延层2的步骤;版权所有：（C）2009，JPO＆INPIT

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公开/公告号JP2009147246A

专利类型
公开/公告日2009-07-02

原文格式PDF
申请/专利权人 MITSUBISHI ELECTRIC CORP;
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申请/专利号JP20070325406
发明设计人 WATANABE TOMOKATSU;IMAIZUMI MASAYUKI;
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申请日2007-12-18
分类号H01L21/205;H01L21/66;C30B29/36;H01L21/3065;H01L21/306;H01L29/12;H01L29/78;
国家 JP
入库时间 2022-08-21 19:43:09

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