The Specificity of Solid-phase Interaction of Aluminium with Silicon Carbide in the Manufacture of Diffusion-welded Contacts to Semiconductor Devices

N. Sleptsuk; O. Korolkov; J. Toompuu; T. Rang; V. Mikli

首页> 外文期刊>Electronics and Electrical Engineering >The Specificity of Solid-phase Interaction of Aluminium with Silicon Carbide in the Manufacture of Diffusion-welded Contacts to Semiconductor Devices

【24h】

The Specificity of Solid-phase Interaction of Aluminium with Silicon Carbide in the Manufacture of Diffusion-welded Contacts to Semiconductor Devices

机译：铝与碳化硅固相相互作用在制造扩散焊接到半导体器件的触点中的特殊性

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

This paper presents the characteristics of solid-phase interaction of aluminium with silicon carbide in the process of creating a diffusion welding of contacts to semiconductor devices. It is shown that the solid-phase etching of silicon carbide has an isotropic polishing effect. Proved that not involved in dissolution carbon atoms precipitate as an amorphous thin layer. Are given the differences of the diffusion welded aluminum interaction between a semiconductor silicon carbide and silicon.

机译：本文介绍了铝与碳化硅在建立半导体器件触点扩散焊接过程中的固相相互作用的特征。结果表明，碳化硅的固相蚀刻具有各向同性的抛光效果。事实证明，不参与溶解的碳原子沉淀为非晶态薄层。给出了半导体碳化硅和硅之间的扩散焊接铝相互作用的差异。

著录项

来源
《Electronics and Electrical Engineering》 |2012年第8期|共4页
作者
N. Sleptsuk; O. Korolkov; J. Toompuu; T. Rang; V. Mikli;
展开▼
作者单位

展开▼
收录信息
原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;电工技术;
关键词
Contacts to semiconductors; Diffusion welding; Silicon carbide; Solid-phase-interaction;

机译：与半导体的接触;扩散焊接;碳化硅;固相相互作用;

相似文献

外文文献
中文文献
专利

1. The Specificity of Solid-phase Interaction of Aluminium with Silicon Carbide in the Manufacture of Diffusion-welded Contacts to Semiconductor Devices [J] . N. Sleptsuk, O. Korolkov, J. Toompuu, Electronics and Electrical Engineering . 2012,第8期

机译：铝与碳化硅固相相互作用在制造扩散焊接到半导体器件的触点中的特殊性
2. Attainment of high specific hardness and specific modulus in spark plasma sintered aluminium-copper-silicon carbide-titanium carbide hybrid composite [J] . Saha S., Ghosh M., Kumar Pramanick A., Materials Science & Engineering Technology . 2021,第9期

机译：火花等离子体烧结铝 - 铜 - 碳化钛碳化物杂交复合材料中高比硬度和特异性模量
3. The Status of R & D of Power Devices by Using Silicon Carbide Semiconductors [J] . Kazuo ARAI セラミックス . 2000,第10期

机译：碳化硅半导体在功率器件研发中的地位
4. Some Comparative Properties of Diffusion-Welded Contacts to 6H and 4H Silicon Carbide [C] . O. Korolkov, T. Rang International Conference on Silicon Carbide and Related Materials 2001 Pt.2 Oct 28-Nov 2, 2001 Tsukuba, Japan . 2001

机译：与6H和4H碳化硅扩散焊接的一些比较特性
5. Performance of devices made of large band-gap semiconductors, silicon carbide and gallium nitride [D] . Okayama, Taizo 2007

机译：大带隙半导体，碳化硅和氮化镓制成的器件的性能
6. Erratum: Polozov I. et al. Fabrication of Silicon Carbide Fiber-Reinforced Silicon Carbide Matrix Composites Using Binder Jetting Additive Manufacturing from Irregularly-Shaped and Spherical Powders. Materials 2020 13 1766 [O] . Igor Polozov, Nikolay Razumov, Dmitriy Masaylo, 2020

机译：错误：PolozovI.等。碳化硅纤维增强碳化硅基质复合材料的制造使用粘合剂喷射添加剂制造不规则形状和球形粉末。材料2020131766
7. The Specificity of Solid-phase Interaction of Aluminium with Silicon Carbide in the Manufacture of Diffusion-welded Contacts to Semiconductor Devices [O] . N. Sleptsuk, O. Korolkov, J. Toompuu, 2012

机译：碳化硅固相相互作用的特异性在碳化硅与半导体器件的扩散焊接触点制造中的特异性
8. Continued Development and Characterization of Doped Layers, Contacts andAssociated Electronic Devices in Silicon Carbide [R] . Davis, R. F., Palmour, J. W. 1990

机译：碳化硅中掺杂层，触点和相关电子器件的持续发展和表征

The Specificity of Solid-phase Interaction of Aluminium with Silicon Carbide in the Manufacture of Diffusion-welded Contacts to Semiconductor Devices

摘要

著录项

相似文献

相关主题

期刊订阅