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MONOCRYSTALLINE SILICON – FUTURE CELL CONCEPTS

机译:单晶硅–未来细胞概念

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An overview of currently used cell processes for monocrystalline silicon in industry is given. Since thescreen printed solar cell process has the biggest market share, advanced screen printing processes are presented. Thefront-side with selective emitter structures are investigated by measuring the emitter saturation current (j_(0e)) onsymmetrical test samples with QSSPC. The reference sample with an industrial homogeneous 50 Ω/□ emitter andfired PECVD SiN has a j_(0e) of 220 fA/cm~2. On selective emitter structures with two diffusion steps, using first a 100Ω/□ diffusion then a SiN layer as mask and finally a 10 Ω/□ diffusion, j_(0e) is 140 fA/cm~2 using PECVD SiN and 120fA/cm~2 respectively with LPCVD SiN. By changing the sequence of light and heavy diffusion and applying PECVDSiN for surface passivation, j_(0e) was measured to 90 fA/cm~2. Solar cells were made with a two step selective emitterand a simplified process with a single diffusion step using laser structured SiN as diffusion suppressing layer and notexture was applied to these cells. The best reference cell with homogeneous 50 Ω/□ emitter has an efficiency of16.2% and 625 mV V_(OC). The best selective emitter solar cells with both used processes have a 10 mV increase ofVOC leading to 635 mV and an efficiency of 17.0% of a cell using the simplified selective emitter process. The bulklifetime of Cz-Si was monitored during a selective emitter process with a screen printed aluminium BSF on the rear.The bulk lifetime of the as grown wafer was 32 μs and was subsequently improved by phosphorous gettering to 67μs. Bulk lifetime was further raised to 120 μs through aluminum gettering of the screen printed BSF. This result hasto be taken into account when applying alternative rear sides with dielectric passivation where beneficial aluminiumgettering cannot be used. Therefore material that does not strongly depend on aluminum gettering should be used. Adielectric rear side passivation can be integrated at several stages in the production process. Each sequence entailsdifferent challenges especially in maintaining the rear side passivation quality at the end of the process.
机译:概述了目前工业上用于单晶硅的电池工艺。自从 丝网印刷太阳能电池工艺具有最大的市场份额,现介绍先进的丝网印刷工艺。这 通过测量发射极的饱和电流(j_(0e))来研究具有选择性发射极结构的前端 使用QSSPC的对称测试样品。具有工业均质50Ω/□发射极的参考样品和 烧制的PECVD SiN的j_(0e)为220 fA / cm〜2。在具有两个扩散步骤的选择性发射极结构上,首先使用100 Ω/□扩散,然后用SiN层作为掩模,最后用PECVD SiN和120扩散10Ω/□,j_(0e)为140 fA / cm〜2 LPCVD SiN分别为fA / cm〜2。通过改变轻扩散和重扩散的顺序并应用PECVD 用于表面钝化的SiN,j_(0e)被测量为90 fA / cm〜2。太阳能电池由两步选择性发射极制成 以及使用激光结构化的SiN作为扩散抑制层而无需扩散的单一扩散步骤的简化工艺 将纹理应用于这些单元格。具有均匀50Ω/□发射极的最佳参考电池的效率为 16.2%和625 mV V_(OC)。两种工艺中最佳的选择性发射极太阳能电池的电导率增加10 mV 使用简化的选择性发射极工艺,VOC导致635 mV的电压和17.0%的电池效率。散装 在选择性发射极工艺的过程中,使用背面的丝网印刷铝BSF监控了Cz-Si的使用寿命。 所生长的晶片的整体寿命为32μs,随后通过磷吸杂剂的使用将其提高至67 微秒通过丝网印刷的BSF的铝吸杂剂,本体寿命进一步提高到120μs。这个结果有 在使用有益的铝材的情况下,在应用带有电介质钝化层的背面时,要考虑到这一点 不能使用吸气剂。因此,应使用不严重依赖铝吸气剂的材料。一种 介电背面钝化可以在生产过程的多个阶段进行集成。每个序列都需要 不同的挑战,特别是在过程结束时保持背面钝化质量方面。

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