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首页> 外文会议>European photovoltaic solar energy conference >SiO_2-BASED SPIN-ON DIELECTRICS FOR BACK SURFACE PASSIVATION OF P-TYPE SI SOLAR CELLS
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SiO_2-BASED SPIN-ON DIELECTRICS FOR BACK SURFACE PASSIVATION OF P-TYPE SI SOLAR CELLS

机译：基于SiO_2的自旋介电体用于P型硅太阳能电池的背面钝化

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Two new SiO_2-based spin-on dielectrics were investigated for use as a back surface passivation layerof p-type Si solar cells: pure spin-on SiO_2 and spin-on SiO_2 with additive. The spin-on SiO_2 behaves similarly to athermally grown SiO_2. They contain a low positive charge density (<2×10~(11) cm~(-2)) and provide high quality of surfacepassivation after a hydrogenation annealing. Their passivation quality degrades significantly after a rapid firing, butrecovers after another hydrogenation annealing. The new spin-on SiO_2 with additive, on the other hand, exhibits ahigh negative charge density (-1 to-2×10~(12) cm~(-2)), provides a high surface passivation quality without the need forhydrogenation, and is much more stable with respect to a rapid firing. The low-frequency (LF) PECVD-SiN_x and thestacked thin thermal oxide (80 ?)/LF-SiN_x, although provide a high surface passivation quality even after a rapidfiring, contain a high positive charge density (～2×10~(12) cm~(-2)), which is detrimental for solar cells because of theparasitic shunting of the dielectric induced inversion layer via back contacts. Solar cell results confirm the benefit ofusing the new spin-on SiO_2 with additive for back passivation: open circuit voltage of ～655 mV was achievedcompared to 632 mV with the stacked SiO_2/LF-SiN_x back passivation.
机译：研究了两种新的基于SiO_2的旋涂电介质用作背面钝化层 p型Si太阳能电池的组成：纯旋涂SiO_2和带添加剂的旋涂SiO_2。旋涂SiO_2的行为类似于 热生长的SiO_2。它们的正电荷密度低（<2×10〜（11）cm〜（-2）），并提供高质量的表面 氢化退火后进行钝化处理。快速烧成后，它们的钝化质量会大大降低，但是 在另一次氢化退火后回收。另一方面，带有添加剂的新型旋涂SiO_2表现出 负电荷密度高（-1至-2×10〜（12）cm〜（-2）），无需使用即可提供高表面钝化质量 氢化，并且相对于快速烧成更加稳定。低频（LF）PECVD-SiN_x和 堆叠的薄热氧化物（80？）/ LF-SiN_x，尽管即使经过快速处理也能提供高的表面钝化质量 焙烧时，具有高的正电荷密度（〜2×10〜（12）cm〜（-2）），这对太阳能电池有害，因为 介电感应反型层通过背触点的寄生分流。太阳能电池结果证实了 使用新型带有添加剂的旋涂式SiO_2进行反向钝化：实现了约655 mV的开路电压 与堆叠的SiO_2 / LF-SiN_x背钝化相比，该电阻为632 mV。

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