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EFFICIENCY POTENTIAL OF RGS SILICON FROM CURRENT RD PRODUCTION

机译:当前R&D生产中RGS硅的效率潜力

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Ribbon Growth on Substrate (RGS) is a low cost silicon ribbon material for photovoltaics. The RGSgrowth technique allows the direct growth of wafers with a very high production speed of one wafer per second. Anindustrial compatible cost effective screen printing process results in an efficiency of 13.1% for an untextured RGScell. Based on this efficiency the silicon consumption per W_(Peak) for a 300 μm thick RGS wafer calculates to5.4 g/W_(Peak) which is about 50% lower compared to standard block cast mc silicon material where a silicon loss ofmore than 50% appears due to ingot casting and wafering by wire saw. The silicon reduction is even morepronounced by the use of thinner RGS wafers. For efficiency demonstration a laboratory type high efficiencyphotolithography based process results in 14.4% efficiency on smaller cell size, which is the highest solar cellefficiency reached on RGS silicon so far. In this paper the applied cell processes as well as cell results are discussedby means of spectral response as well as spatially resolved LBIC measurements showing the characteristics of thismulti-crystalline silicon ribbon material.
机译:基板上的碳带生长(RGS)是一种用于光伏的低成本硅碳带材料。 RGS 生长技术可以以每秒一个晶片的非常高的生产速度直接生长晶片。一个 与工业兼容的经济高效的丝网印刷工艺,无纹理的RGS的效率为13.1% 细胞。基于此效率,对于300μm厚的RGS晶圆,每W_(Peak)的硅消耗量计算为 5.4 g / W_(峰值),比标准的块式铸造mc硅材料低约50%,后者的硅损失为 超过50%的出现是由于铸锭和用线锯切成薄片造成的。硅减少量更大 通过使用更薄的RGS晶圆而显着。为了进行效率演示,实验室类型的高效率 基于光刻的工艺可在较小的电池尺寸上实现14.4%的效率,这是最高的太阳能电池 到目前为止,在RGS硅片上达到的效率。在本文中,讨论了应用的细胞过程以及细胞结果 通过光谱响应以及空间分辨的LBIC测量来显示这种特性 多晶硅带材料。

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