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首页> 外文期刊>Solar Energy Materials and Solar Cells: An International Journal Devoted to Photovoltaic, Photothermal, and Photochemical Solar Energy Conversion >Changes in the current density-voltage and external quantum efficiency characteristics of n-type single-crystalline silicon photovoltaic modules with a rear-side emitter undergoing potential-induced degradation
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Changes in the current density-voltage and external quantum efficiency characteristics of n-type single-crystalline silicon photovoltaic modules with a rear-side emitter undergoing potential-induced degradation

机译：后侧发射极发生电势退化的n型单晶硅光伏组件的电流密度-电压和外部量子效率特性的变化

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摘要

This study addresses the potential-induced degradation (PID) of n-type single-crystalline silicon (sc-Si) photovoltaic (PV) modules with a rear-side emitter. The n-type rear-emitter module configurations were fabricated using n-type bifacial sc-Si solar cells by module lamination with the p(+) emitter side down. After the PID tests applying -1000 V, the modules show a rapid decrease in the open-circuit voltage (V-oc), followed by relatively slower reductions in the fill factor and the short-circuit current density (J(sc)). Their dark current density-voltage (J-V) data and external quantum efficiencies (EQEs) indicate that the drop in V-oc is caused by an increase in the saturation current density due to the enhanced surface recombination of minority carriers. In contrast, the modules exhibit slight degradation under +1000 V, which is characterized by only slight decreases in V-oc and J(sc). The EQE measurement reveals that these decreases are also attributed to the enhanced surface recombination of minority carriers. This behavior is almost identical to that of the polarization effect in n-type interdigitated back contact PV modules reported in a previous study. By comparing the PID resistance with that of other types of modules, the n-type rear-emitter PV modules are relatively resistant to PID. This may become an advantage of the n-type rear-emitter PV modules. (C) 2016 Elsevier B.V. All rights reserved.
机译：这项研究解决了带有背面发射极的n型单晶硅（sc-Si）光伏（PV）模块的电势退化（PID）。使用n型双面sc-Si太阳能电池通过将p（+）发射极面朝下的模块叠层来制造n型后发射极模块配置。在施加-1000 V的PID测试之后，模块显示开路电压（V-oc）迅速降低，随后填充因子和短路电流密度（J（sc））的降低相对较慢。他们的暗电流密度-电压（J-V）数据和外部量子效率（EQEs）表明，V-oc的下降是由于少数载流子表面重组增强而导致的饱和电流密度增加所致。相反，模块在+1000 V电压下表现出轻微的退化，其特征是V-oc和J（sc）仅略有下降。 EQE测量结果表明，这些下降也归因于少数载流子表面重组的增强。此行为几乎与先前研究中报道的n型叉指背接触式PV组件中的极化效应相同。通过将PID电阻与其他类型的模块的PID电阻进行比较，n型后发射极PV模块相对具有PID的电阻。这可能会成为n型后发射器PV模块的优势。 （C）2016 Elsevier B.V.保留所有权利。

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