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首页> 外文会议>European photovoltaic solar energy conference >SILVER DIFFUSED In_2S_3 WITH AND WITHOUT THERMAL ASSISTANCE; AN IDEAL BUFFER LAYER FOR THIN FILM SOLAR CELLS
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SILVER DIFFUSED In_2S_3 WITH AND WITHOUT THERMAL ASSISTANCE; AN IDEAL BUFFER LAYER FOR THIN FILM SOLAR CELLS

机译：在有和没有热辅助的情况下，银在In_2S_3中扩散;薄膜太阳能电池的理想缓冲层

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摘要

β-In_2S_3, the stable phase of In_2S_3 at room temperature, crystallizes in a defect spinel lattice, with a high degree of vacancies,ordering at tetrahedral cation sites. Due to large number of cationic vacancies indium sulfide acts as a sink for dopant atoms.Present studies revealed that Ag changed the properties of In_2S_3 favorably. This paper, we describe variations in structural,electrical, and optical properties of spray pyrolysed β-In_2S_3 thin films on Ag doping and post annealing effects. Doping wasachieved by diffusion. It was observed that silver diffused into In_2S_3 films in ‘as-deposited’ condition itself (without thermalassistance). Depth profile using x-ray photoelectron spectroscopy clearly showed diffusion of silver into In_2S_3 layer. X-rayanalysis revealed significant enhancement in crystallinity and grain size up to an optimum percentage of dopingconcentration. This optimum value showed dependence on thickness and atomic ratio of indium and sulfur in the film.Sample having the optimum doping was found to be more photosensitive and low resistive when compared with a pristinesample. Impact of post annealing on the optimum doping was also studied; results proved that optimum value of silverdecreased on enhancing the diffusivity by thermal assistance and excess silver retraced to the surface of the films onannealing. Thus silver diffused indium sulfide surpassed pristine sample for crystallinity and photosensitivity.
机译：β-In_2S_3（In_2S_3在室温下的稳定相）在尖晶石晶格中结晶，具有很高的空位， 在四面体阳离子位点有序。由于大量的阳离子空位，硫化铟充当了掺杂原子的吸收体。 目前的研究表明，Ag有利地改变了In_2S_3的性质。在本文中，我们描述了结构上的变化， 喷雾热解β-In_2S_3薄膜的电学和光学性质对Ag掺杂和后退火的影响。原“掺杂”为 通过扩散实现。观察到，银本身在“沉积”条件下（没有热）扩散到In_2S_3薄膜中。 帮助）。使用X射线光电子能谱的深度轮廓清楚地表明银扩散到In_2S_3层中。 X光 分析表明，结晶度和晶粒尺寸显着提高，达到了最佳掺杂百分比 专注。该最佳值显示出对膜中铟和硫的厚度和原子比的依赖性。 与原始相比，具有最佳掺杂的样品被发现具有更高的光敏性和更低的电阻率 样本。还研究了后退火对最佳掺杂的影响。结果证明银的最佳值 通过热辅助提高扩散率降低，并且过量的银回溯到薄膜上的膜表面 退火。因此，银扩散的硫化铟在结晶度和光敏性方面都超过了原始样品。

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