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首页> 外文会议>European photovoltaic solar energy conference >PHYSICAL VAPOR DEPOSITION OF In_2S_3 BUFFER ON Cu(In,Ga)Se_2 ABSORBER: OPTIMIZATION OF PROCESSING STEPS FOR IMPROVED CELL PERFORMANCE
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PHYSICAL VAPOR DEPOSITION OF In_2S_3 BUFFER ON Cu(In,Ga)Se_2 ABSORBER: OPTIMIZATION OF PROCESSING STEPS FOR IMPROVED CELL PERFORMANCE

机译：Cu（In，Ga）Se_2吸收体上In_2S_3缓冲液的物理气相沉积：优化电池性能的工艺步骤

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Physical vapor deposition (PVD) method was employed to deposit In_2S_3 buffer layers on Cu(In,Ga)Se_2(CIGS) absorber. The buffer layers were grown by evaporation of In_2S_3 powder as a source material. Themicrostructural behavior and chemical composition of the source materials as a function of the time of evaporationhave been studied. A significant amount of sulfur loss was detected in coarse powder, while the finer powder wasfound to be chemically stable. X-ray diffraction (XRD) examination revealed the presence of In_2O_3 in the coarsepowder after 4 min of evaporation. Solar cells made of a buffer layer deposited from fine powder resulted in lowerefficiency (e.g. 8.6%) than that made from coarse powder (e.g. 11.6%). A maximum efficiency of 12.1% wasreached after air annealing of the completed cell. A highly efficient solar cell of 14.1% efficiency was developedwith a ～60 nm thin In_2S_3 buffer layer.
机译：采用物理气相沉积（PVD）方法将In_2S_3缓冲层沉积在Cu（In，Ga）Se_2上 （CIGS）吸收器。通过蒸发作为源材料的In_2S_3粉末来生长缓冲层。这 原材料的微观结构行为和化学成分随蒸发时间的变化 已经研究过了。在粗粉中检测到大量的硫损失，而细粉为 被发现是化学稳定的。 X射线衍射（XRD）检查显示在粗晶中存在In_2O_3 蒸发4分钟后得到粉末。由细粉沉积的缓冲层制成的太阳能电池可降低 效率（例如8.6％）要比粗粉（例如11.6％）高。最高效率为12.1％ 空气退火完成的电池后达到。开发出效率为14.1％的高效太阳能电池 厚度约为60 nm的In_2S_3缓冲层。

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