The design, simulations and optimization of a novel high-voltage vertical GaN MOS-controlled High Electron Mobility Transistor (HEMT) with epitaxially grown thin p type body and terrace gate structure is presented, with projected maximum breakdown voltage of 1278 V, Figure of Merit (FOM) of 636 mΩ-nC and Ron,sp of 1.24 mΩ-cm~2.
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