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首页> 外文会议>Electronics Division Meeting of the Ceramic Society of Japan >Crystal Growth and Characterization of (Bi_(0.5)Na_(0.5))TiO_3-BaTiO_3 Single Crystals Obtained by The Top-Seeded Solution Growth Method under High-Pressure Oxygen Atmosphere
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Crystal Growth and Characterization of (Bi_(0.5)Na_(0.5))TiO_3-BaTiO_3 Single Crystals Obtained by The Top-Seeded Solution Growth Method under High-Pressure Oxygen Atmosphere

机译：晶体生长和表征（Bi_（0.5）Na_（0.5））TiO_3-BATIO_3通过高压氧气气氛下的粒子溶液生长方法获得的单晶

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摘要

A single crystal of ferroelectric 0.88(Bi,Na)TiO_3-0.12BaTiO_3 (BNT-BT) solid solution with tetragonal P4mm structure was grown by the top-seeded solution growth (TSSG) method at a high oxygen pressure (P_(O_2)) of 0.9 MPa. The crystals grown by the high-/>o2 TSSG method exhibited a large remanent polarization (P_r) of 54 μC/cm~2, which leads to a spontaneous polarization of 54 μC/cm~2. The large P_r compared with that of crystals grown at P_(O_2) = 0.1 MPa is suggested to originate from a low oxygen vacancy concentration for the crystals grown at a higher P_(O_2). The high-P_(O_2) TSSG method was demonstrated to be effective for obtaining BNT-BT crystals with superior polarization and piezoelectric properties.
机译：通过在高氧气压力下的顶部溶液生长（TSSG）方法生长具有四方P4mm结构的铁电0.88（Bi，Na）TiO_3-0.12batiO_3（BNT-BT）固溶体的单晶（P_（O_2）） 0.9 MPa。由高/> O2 TSSG方法生长的晶体表现出54μC/ cm〜2的大的剩余偏振（P_R），这导致自发极化为54μC/ cm〜2。与在P_（O_2）= 0.1MPa处生长的晶体相比的大P_R被建议起源于在更高的P_（O_2）上生长的晶体的低氧空位浓度。对高P_（O_2）TSSG方法进行说明是为了获得具有优异偏振和压电性能的BNT-BT晶体有效。

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