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首页> 外文会议>Electronics Division Meeting of the Ceramic Society of Japan >Investigation of domain structure and electrical properties of monoclinic epitaxial zirconia buffer layer
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Investigation of domain structure and electrical properties of monoclinic epitaxial zirconia buffer layer

机译：单斜晶外延氧化锆缓冲层的结构域结构和电学性能研究

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Epitaxial ZrO{sub}2 buffer layers of monoclinic phase have been grow on p-Si(001) wafers. The thickness of the buffer layer is 17nm and 3nm. Wide angle X-ray reciprocal space mapping and high resolution transmission electron microscope (HRTEM) analysis have shown that many ferroelastic 90° and 180° domains, of which 001 plane align nearly in out-of plane direction for 17nm ZrO{sub}2 buffer layer, and that nano-sized monoclinic phase has coherently precipitated in tetragonal matrix for 3nm ZrO{sub}2 buffer layer. Capacitance-Voltage (C-V) measurement has shown that the C-V curve of ZrO{sub}2 buffer layer showed charge-injection type hysteresis. The width has been 26mV for 17nm ZrO{sub}2 buffer layer and 2mV for 3nm ZrO{sub}2 buffer layer, which correspond to the density of oxide-trapped charge of 2.4×10{sup}11cm{sup}(-2) and 2.8×10{sup}11cm{sup}(-2), respectively. The density of interface-trapped charge has been 2×10{sup}11 cm{sup}(-2)·eV{sup}(-1), and 9.7×10{sup}10cm{sup}(-2)·eV{sup}(-1), respectively.
机译：单斜阶段的外延ZrO {sub} 2缓冲层在P-Si（001）晶片上生长。缓冲层的厚度为17nm和3nm。广角X射线往复式空间映射和高分辨率透射电子显微镜（HRTEM）分析表明，许多铁弹性90°和180°域，其中001平面几乎与17nm ZrO {Sub} 2缓冲器的外平面方向对齐层，纳米大小的单斜相对于3nm Zro {} 2缓冲层的四字基质中连贯地沉淀。电容 - 电压（C-V）测量表明，ZrO {Sub} 2缓冲层的C-V曲线显示了充电型滞后。宽度为26mV用于17nm zro {sub} 2缓冲层和2mV用于3nm zro {sub} 2缓冲层，其对应于2.4×10×11cm {sup} 11cm {sup}的氧化物捕获电荷的密度。（ - 2分别为2.8×10 {sup} 11cm {sup}（ - 2）。接口被捕获的电荷的密度已为2×10 {sup} 11cm {sup}（ - 2）·eV {sup}（ - 1），9.7×10 {sup} 10cm {sup}（ - 2）· EV {SUP}（ - 1）分别。

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