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首页> 外文会议>Electronics Division Meeting of the Ceramic Society of Japan >Development of lead-free piezoelectric thick films with a/b-axis-oriented Bi{sub}(4-x)Pr{sub}xTi{sub}3O{sub}12
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Development of lead-free piezoelectric thick films with a/b-axis-oriented Bi{sub}(4-x)Pr{sub}xTi{sub}3O{sub}12

机译：用A / B轴取向的Bi {Sub}（4-x）Pr {Sub} xti {sub} 3

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摘要

Pr-substituted Bi{sub}4Ti{sub}3O{sub}12 (BPT, Bi{sub}(4-x)Pr{sub}xTi{sub}3O{sub}12, x=0.1-0.4) polycrystalline thick films with a-/b-axes orientations and thickness of 2-3 μm were grown on sputter-grown IrO{sub}2 layers by chemical solution deposition method for developing lead-free piezoelectric film microdevices. Electric-field-induced strains measurements were performed by double-beam laser displacement meter and longitudinal strain of ε=0.25 % under 400 kV/cm and piezoelectric coefficient d{sub}33=63 pm/V at 10 Hz were observed in BPT thick film of x=0.1 with a-/b-axes mixed orientations. The value of strain closely related to spontaneous polarization and monotonously decreased with increasing x. Microstructures of 3 μm-thick BPT films were fabricated by photolithography and dry etching processes with several tens micrometers in size.
机译：PR-替换BI {SUB} 4TI {sub} 3o {sub} 12（bpt，bi {sub}（4-x）pr {sub} xti {sub} 3o {sub} 12，x = 0.1-0.4）多晶厚通过化学溶液沉积方法在溅射生长的IRO {Sub} 2层上生长具有A- / B轴取向和厚度为2-3μm的薄膜，用于显影无铅压电膜微霉品。通过双束激光位移计和ε= 0.25％的纵向应变在400kV / cm和压电系数d {sub} 33 =63μm/ v下的纵向菌株进行测量。在BPT厚X = 0.1的薄膜具有A- / B轴混合取向。与自发极化密切相关的应变值，随着x的增加，单调地减少。通过光刻和干蚀刻工艺制造3μm厚的BPT薄膜的微观结构，其尺寸为几何微米。

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