Total-dose effects caused by high-energy neutrons and γ-rays in Multiple-Gate FETs

机译：多门FET中高能中子和γ射线引起的总剂量效应

获取原文

页面导航

摘要
著录项
相似文献
相关主题

摘要

This work investigates the effects of high-energy neutrons and γ-rays on Multiple-Gate FETs with different geometries (notably gate lengths down to 50 nm). The impact of radiation on device behavior is addressed through the variation of parameters such as threshold voltage, subthreshold slope, transconductance maximum and DIBL. It is shown that degradations caused by γ-rays and high-energy neutrons with similar doses are largely similar. It is revealed that, contrarily to the generally-believed immunity to irradiation, very short-channel FinFETs can become extremely sensitive to the total dose effect. The possible reasons are discussed.

机译：这项工作研究了高能中子和γ射线对具有不同几何形状（尤其是栅极长度低至50 nm）的多栅极FET的影响。辐射对器件行为的影响通过参数变化来解决，例如阈值电压，亚阈值斜率，最大跨导和DIBL。结果表明，由类似剂量的γ射线和高能中子引起的降解非常相似。据揭示，与通常认为的对辐射的免疫力相反，非常短通道的FinFET对总剂量效应可能变得极为敏感。讨论了可能的原因。

著录项

来源
《2009 European Conference on Radiation and Its Effects on Components and Systems》|2009年|p.7-13|共7页
会议地点
作者
Kilchytska V.; Alvarado J.; Collaert N.; Rooyakers R.; Militaru O.; Berger G.; Flandre D.;
展开▼
作者单位

展开▼
会议组织
原文格式 PDF
正文语种
中图分类无线电技术;
关键词
γ irradiation; FinFETs; high-energy neutrons; interface traps;

机译：γ辐照; FinFET;高能中子;界面陷阱;

相似文献

外文文献
中文文献
专利

1. Total-Dose Effects Caused by High-Energy Neutrons and -Rays in Multiple-Gate FETs [J] . Kilchytska V., Alvarado J., Collaert N., Nuclear Science, IEEE Transactions on . 2010,第4期

机译：多栅极FET中高能中子和-射线引起的总剂量效应
2. High-energy neutrons effect on strained and non-strained SOI MuGFETs and planar MOSFETs [J] . V. Kiichytska, J. Alvarado, S. Put, Microelectronics reliability . 2012,第1期

机译：高能中子对应变和非应变SOI MuGFET和平面MOSFET的影响
3. Characteristics of GaAs buffered FET logic (BFL) MESFETs and inverters exposed to high-energy neutrons [J] . Rosenbluth M., Bloss W.L. IEEE Transactions on Nuclear Science . 1991,第1期

机译：GaAs缓冲FET逻辑（BFL）MESFET和暴露于高能中子的逆变器的特性
4. Total-dose effects caused by high-energy neutrons and #x03B3;-rays in Multiple-Gate FETs [C] . Kilchytska V., Alvarado J., Collaert N., European Conference on Radiation and its Effects on Components and Systems . 2009

机译：由多栅极FET中的高能中子和γ射线引起的全剂量效应
5. Bystander effects due to neutrons, and low-dose hyper-radiosensitivity to gamma rays in human cells using cytogenetics. [D] . Seth, Isheeta. 2014

机译：中子的旁观者效应，以及使用细胞遗传学对人类细胞中的伽玛射线造成的低剂量超放射敏感性。
6. Biological Effects of High-Energy Neutrons Measured In Vivo Using a Vertebrate Model [O] . Wendy W. Kuhne, Brad B. Gersey, Richard Wilkins, -1

机译：测量在体内使用脊椎动物型号高能中子的生物效应
7. X-ray and neutron reflectometry study of copper surface reconstruction caused by implantation of high-energy oxygen ions [O] . Khaydukov, Yu. N., Soltwedel, O., Marchenko, Yu. A., 2014

机译：铜表面重建的X射线和中子反射计研究由高能氧离子注入引起

Total-dose effects caused by high-energy neutrons and γ-rays in Multiple-Gate FETs

摘要

著录项

相似文献

相关主题

期刊订阅