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A low stress switch applied on the optical network based upon CMOS-MEMS common process

机译:基于CMOS-MEMS通用工艺的光网络低应力开关

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A low stress switch applied on the optical network based upon CMOS-MEMS common process was proposed in this study. The effects of the width of lateral connection arm, the lengths of longitudinal connection arm and the supporting arm on the displacement of out of plane and the lateral stress of the device were investigated to find the optimum dimension through the study of simulation. The maximum displacement of the optimum design was achieved to 41.9µm and the tilt angle was 6.47°. The surface deformation of the micro mirror was 0.00056µm/µm. The maximum lateral stress was 132.1 MPa located on the PolySi layer, and that was far lower than the ultimate stress of PolySi. The threshold voltage of Poly 1 layer in the process was 5.2V after the electrical measurement of the released device, when the optical device was loaded on the thermal actuator.
机译:提出了一种基于CMOS-MEMS通用工艺的光网络低应力开关。通过仿真研究,研究了横向连接臂的宽度,纵向连接臂和支撑臂的长度对平面外位移和装置的侧向应力的影响,以找到最佳尺寸。最佳设计的最大位移达到41.9μm,倾斜角为6.47°。微镜的表面变形为0.00056μm/μm。位于多晶硅层上的最大横向应力为132.1 MPa,远低于多晶硅的极限应力。当将光学器件装载到热执行器上时,在对释放的器件进行电气测量之后,过程中的Poly 1层的阈值电压为5.2V。

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