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首页> 外文会议>2010 International Conference on Measuring Technology and Mechatronics Automation >Deposition of dense SiO2 thin films for electrical insulation applications by microwave ECR plasma source enhanced RF reactive magnetron sputtering
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Deposition of dense SiO2 thin films for electrical insulation applications by microwave ECR plasma source enhanced RF reactive magnetron sputtering

机译：微波ECR等离子体源增强的RF反应磁控溅射沉积用于电绝缘应用的致密SiO2薄膜

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Silicon dioxide thin films have been deposited successfully on high speed steel (HSS) cutting tool substrates by means of microwave electron cyclotron resonance (MW-ECR) plasma source enhanced RF reactive magnetron sputtering of a pure silica target in an oxygen and argon mixture. The films are characterized by atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared spectroscopy (FT-IR). Chemical composition of the thin films on HSS cutting tools have been investigated as a function of the gas volume ratio [O2]/[Ar], RF power and substrate bias. A comparative study of the SiO2 thin films deposited at -20V DC bias and -80V RF bias is presented. An improvement of the SiO2 thin film properties due to increased energetic substrate bombardment has been found, it is concluded that SiO2 thin films deposited on HSS cutting tools by this method are compact and dense, and have good stoichiometry and electrical insulation properties.
机译：二氧化硅薄膜已通过微波电子回旋共振（MW-ECR）等离子体源增强的纯氧靶在氧气和氩气混合物中的RF反应磁控溅射技术成功地沉积在高速钢（HSS）切割工具基材上。这些膜的特征在于原子力显微镜（AFM），X射线光电子能谱（XPS）和傅里叶变换红外光谱（FT-IR）。已经研究了高速钢切削刀具上薄膜的化学成分与气体体积比[O2] / [Ar]，RF功率和基板偏压的关系。提出了在-20V DC偏压和-80V RF偏压下沉积的SiO2薄膜的比较研究。已经发现由于高能基体轰击而导致的SiO 2薄膜性质的改善，结论是通过这种方法沉积在HSS切削工具上的SiO 2薄膜致密且致密，并且具有良好的化学计量和电绝缘性质。

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