• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文会议>China international conference on high-performance ceramics >Oxidation Behaviors of TiB2-TiCx and TiB2-TiC x/15SiC Ceramics
【24h】

Oxidation Behaviors of TiB2-TiCx and TiB2-TiC x/15SiC Ceramics

机译：TIB2-TICX和TIB2-TIC X / 15SIC陶瓷的氧化行为

获取原文
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Fully dense samples of TiB2-TiCx and TiB2-TiCx/15SiC ceramic composites were fabricated by in-situ synthesis under hot isostatic pressing from Till2,B4C and SiC powders.Their oxidized behaviors at different temperatures were tested.Optical micrograph studies and thermo-gravimetric analyses show that the highest effective temperature of oxidation resistance is 700°C for TiB2-TiCx,and 1100°C for TiB2-TiCx/15SiC.The weight gain of TiB2-TiCx/15SiC below 1100°C is quite low,and it rises up suddenly when the temperature reaches 1200°C.Thus,the highest effective temperature of oxidation resistance is 1100°C for TiB2-TiCx/15SiC.The oxidation dynamic curves of TiB2-TiCx/15SiC ceramics accord with the parabola's law.The activation energy of TiB2-TiCx/15SiC (189.87kJ.mol1) is higher than that of TiB2-TiCx (96.44kJ.mol-1).In the oxidation process of TiB2-TiCx/15SiC,TiB2 reacts with oxygen and generates TiO2 and B2O3 at first.A layer of whole homogeneous oxide film cannot be formed,in the mean time,the oxidation of TiC begins.When temperature goes up to 1000°C,TiC phase is totally oxidized.SiC is oxidized to SiO2 at about 900°C,Meanwhile,TiO2 forms denser film than B2O3,which grows and covers the surface of the material,and gives better property of oxidation resistance.
机译：通过从TI12，B4C和SiC粉末的热等静压下原位合成通过原位合成制备的TIB2-TICX和TIB2-TICX / 15SIC陶瓷复合材料的完全致密样品。测试不同温度的氧化行为。光学显微照片和热重量分析表明，TIB2-TICX的抗氧化性最高有效温度为700°C，1100°C对于TIB2-TICX / 15SIC。TIB2-TICX / 15SIC的重量增益低于1100°C，非常低，并且升高当温度达到1200°C时突然，抗氧化抗性的最高有效温度为1100°C对于TIB2-TICX / 15SIC。TIB2-TICX / 15SIC陶瓷的氧化动态曲线与Parawola的定律符合。激活能量TIB2-TICX / 15SIC（189.87KJ.mol1）高于TIB2-TICX（96.44KJ.mol-1）。在TIB2-TICX / 15SIC的氧化过程中，TIB2与氧气反应，产生TiO2和B2O3首先，不能形成整个均匀氧化膜的层，Tic的氧化开始。当温度高达1000℃时，TiC相是完全氧化的.SIC在约900℃下氧化成SiO 2，同时TiO2形成小于B2O3的密集膜，其增长并覆盖了材料，并提供更好的抗氧化性性能。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号