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Synergistic Effect of Light Illumination and Bias-Stress on Threshold Voltage Shift of Ink-jet Printed TIPS-Pentacene Thin-Film Transistor

机译：光照明和偏置应力对喷墨印刷TIPS-并五苯薄膜晶体管阈值电压漂移的协同效应

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We have studied the electrical stability of the ink-jet printed 6, 13- bis (triisopropyl-silylethynyl) pentacene thin film transistors (TIPS -pentacene TFT) with ink-jet printed Ag source /drain electrodes. We have measured the gate bias effect in dark, and the gate bias effect under light illumination on TFT performance. We found the big change in the transfer characteristics after the TFT is positively gate biased under illumination. The results are discussed with the carrier trappings at the interface and in the bulk.

机译：我们已经研究了带有喷墨印刷的Ag源/漏电极的6个13-双（三异丙基-甲硅烷基乙炔基）并五苯薄膜晶体管（TIPS-并五苯TFT）的电稳定性。我们已经测量了在黑暗中的栅极偏置效应，以及在光照下的栅极偏置效应对TFT性能的影响。我们发现，在照明条件下，TFT被正栅极偏置后，传输特性发生了巨大变化。讨论了界面处和整体中载流子陷阱的结果。

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《IDW '10;International display workshops》|2011年|p.747-750|共4页
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Tae Ha Hwang; Sun Hee Lee; Sung Hoon Kim; Min Hee Choi; Jin Jang;
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中图分类显示设备、显示器;
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2. Low-voltage pentacene thin-film transistors with Ta_2O_5 gate insulators and their reversible light-induced threshold voltage shift [J] . Van Liang, Guifang Dong, Van Hu, Applied Physics Letters . 2005,第13期

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3. Threshold-Voltage-Shift Compensation and Suppression Method Using Hydrogenated Amorphous Silicon Thin-Film Transistors for Large Active Matrix Organic Light-Emitting Diode Displays [J] . Kyonghwan Oh, Oh-Kyong Kwon Japanese journal of applied physics . 2012,第3Issue2期

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4. Synergistic Effect of Light Illumination and Bias-Stress on Threshold Voltage Shift of Ink-jet Printed TIPS-Pentacene Thin-Film Transistor [C] . Tae Ha Hwang, Sun Hee Lee, Sung Hoon Kim, International display workshops . 2010

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Synergistic Effect of Light Illumination and Bias-Stress on Threshold Voltage Shift of Ink-jet Printed TIPS-Pentacene Thin-Film Transistor

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