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Study on the secondary electron emission of metal-curved surfaces in low-octane primacy electrons

机译：低辛烷值初电子中金属弯曲表面的二次电子发射研究

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This paper put forward the definition of shape-factor firstly and discussed the effects ofshape-factor of the secondary electron emission in metal-curved surface in low energy primaryelectrons. Based on semi-classical theorem and calculated the approximate relation betweenincidence angle and secondary electron emission coefficient, which combined the shape of thesurface and further obtained the method of calculating the secondary electrons emissioncoefficient. In the case, deduced the secondary electron emission coefficient of cylindricalsurfaces, then the theory was proved to be true by experimental data and we also discussed thereasons. The conclusion is that secondary electrons emission of metal-curved surfaces is algebraicproduct of shape-factor and the secondary electron emission coefficient of metal.

机译：本文首先提出了形状因子的定义，并讨论了形状因子的作用。低能一次金属弯曲表面二次电子发射的形状因子电子。基于半经典定理，计算出两者之间的近似关系入射角和二次电子发射系数，它们结合了表面并进一步获得了二次电子发射的计算方法系数。在这种情况下，推导出圆柱的二次电子发射系数表面，然后通过实验数据证明该理论是正确的，并且我们还讨论了原因。结论是金属弯曲表面的二次电子发射是代数的形状因子与金属的二次电子发射系数的乘积。

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《IAC;International Astronautical Congress》|2011年|p.1-7|共7页
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Jianfei LONG; Mingming SUN; Licheng TIAN;
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中图分类航空、航天技术的研究与探索;航空、航天技术的研究与探索;
关键词
shape-factor; low energy primary electrons; secondary electron emission coefficient;

机译：形状因子;低能一次电子;二次电子发射系数;

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1. Hydrogen termination and electron emission from CVD diamond surfaces: a combined secondary electron emission, photoelectron emission microscopy, photoelectron yield, and field emission study [J] . J. B. Cui, J. Ristein, M. Stammler, Diamond and Related Materials . 2000,第3a6期

机译：CVD金刚石表面的氢终止和电子发射：二次电子发射，光电子发射显微镜，光电子产率和场发射研究的组合
2. Study of secondary electron emission from semiconductors induced by electrons from 20?eV to 800?eV and surface state of semiconductors [J] . Ai-Gen Xie, Yang Yu, Chen-Nan Song, Results in Physics . 2019,第44期

机译：由20？eV至800？eV的电子感应的半导体二次电子发射以及半导体的表面状态的研究
3. Secondary-electron emission by 0.5-MeV/u H, He, and Li ions specularly reflected from a SnTe(001) surface: Possibility of the surface track potential reducing the secondary-electron yield at a semiconductor surface - art. no. 062902 [J] . Kimura K., Nakajima K., Usui S. Physical Review, A. Atomic, molecular, and optical physics . 2000,第6期

机译：从SnTe（001）表面镜面反射的0.5-MeV / u H，He和Li离子产生二次电子：表面走线电位的可能性会降低半导体表面的二次电子产率。没有。 062902
4. Study on the secondary electron emission of metal-curved surfaces in low-octane primacy electrons [C] . Jianfei LONG, Mingming SUN, Licheng TIAN International Astronautical Congress . 2011

机译：低辛烷初步电子中金属弯曲表面二次电子发射的研究
5. Computational Modeling of Plasma-Induced Secondary Electron Emission from Micro-Architected Surfaces [D] . Chang, Hsing-Yin 2019

机译：微弧形表面等离子体诱导的二次电子发射的计算模型
6. On the Reflection and Re-emission of Electrons from Metal Surfaces: and a Method of Measuring the Ionizing Potential of Such Surfaces [O] . R. A. Millikan, I. G. Barber 1921

机译：从金属表面反射和再发射电子：以及一种测量此类表面电离势的方法
7. Secondary-electron emission by 0.5-MeV/u H, He, and Li ions specularly reflected from a SnTe(001) surface: Possibility of the surface track potential reducing the secondary-electron yield at a semiconductor surface [O] . Kimura K, Usui S, Nakajima K 2000

机译：从SnTe（001）表面镜面反射的0.5-MeV / u H，He和Li离子的二次电子发射：表面走线电势可能会降低半导体表面的二次电子产率

Study on the secondary electron emission of metal-curved surfaces in low-octane primacy electrons

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