Secondary-electron emission by 0.5-MeV/u H, He, and Li ions specularly reflected from a SnTe(001) surface: Possibility of the surface track potential reducing the secondary-electron yield at a semiconductor surface - art. no. 062902

Kimura K.; Nakajima K.; Usui S.

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Secondary-electron emission by 0.5-MeV/u H, He, and Li ions specularly reflected from a SnTe(001) surface: Possibility of the surface track potential reducing the secondary-electron yield at a semiconductor surface - art. no. 062902

机译：从SnTe（001）表面镜面反射的0.5-MeV / u H，He和Li离子产生二次电子：表面走线电位的可能性会降低半导体表面的二次电子产率。没有。 062902

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We have measured secondary-electron (SE) yield gamma induced by 0.5 MeV/u H, He, and Li ions specularly reflected from a SnTe(001) surface. The position-dependent SE production rate is derived from the observed gamma. The SE production rate normalized by the observed mean square charge of the reflected ions is almost independent of the atomic number of the projectile ion. This indicates that the surface track potential induced by the projectile ion is negligibly small to affect the SE emission at semiconductor surfaces probably due to rapid relaxation processes. [References: 20]

机译：我们已经测量了从SnTe（001）表面镜面反射的0.5 MeV / u H，He和Li离子诱导的二次电子（SE）伽马。位置相关的SE生产率是从观察到的伽马值得出的。通过观察到的反射离子的均方电荷归一化的SE生产率几乎与弹丸离子的原子序数无关。这表明，由弹丸离子引起的表面轨迹电位很小，可以忽略不计，这可能是由于快速弛豫过程影响了半导体表面的SE发射。 [参考：20]

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《Physical Review, A. Atomic, molecular, and optical physics》 |2000年第6期|共9页
作者
Kimura K.; Nakajima K.; Usui S.;
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正文语种 eng
中图分类物理学;
关键词
Stopping power; Heavy-ions; Solids; Bombardment; Insulators; Ejection; Probe;

机译：制动力;重离子;固体;轰击;绝缘子;弹射;探头;

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1. Secondary-electron emission by 0.5-MeV/u H, He, and Li ions specularly reflected from a SnTe(001) surface: Possibility of the surface track potential reducing the secondary-electron yield at a semiconductor surface - art. no. 062902 [J] . Kimura K., Nakajima K., Usui S. Physical Review, A. Atomic, molecular, and optical physics . 2000,第6期

机译：从SnTe（001）表面镜面反射的0.5-MeV / u H，He和Li离子产生二次电子：表面走线电位的可能性会降低半导体表面的二次电子产率。没有。 062902
2. Secondary-electron yields and their dependence on the angle of incidence on stainless-steel surfaces for three energetic ion beams - art. no. 042901 [J] . Thieberger P., Steski DB., Zajic V., Physical Review, A. Atomic, molecular, and optical physics . 2000,第4期

机译：三种高能离子束的二次电子产率及其对不锈钢表面入射角的依赖性-艺术没有。 042901
3. Surface track potential created by fast protons at LiF surfaces - art. no. 062902 [J] . Arnau A., Gravielle MS., Miraglia JE., Physical Review, A. Atomic, molecular, and optical physics . 2003,第6期

机译：LiF表面上的快速质子产生的表面轨道电位-艺术没有。 062902
4. Swcondary electron emission from SnTe(001) and KCl(001) surfaces induced by specularly reflected protons [C] . G.Andou, S.Ooki, K.Nakajima, International conference on application of accelerators in research and industry . 1999

机译：通过镜面反射质子诱导的SNTR（001）和KCl（001）表面的二次电子发射
5. Computer simulations of the structure, stability and phase transitions of diatomic molecules physisorbed on ionic surfaces: the carbon monoxide/magnesium oxide(001), nitrogen/magnesium oxide(001) and nitrogen/sodium chloride(001) systems. [D] . Sallabi, Abdulwahab K. 2002

机译：离子表面上物理吸附的双原子分子的结构，稳定性和相变的计算机模拟：一氧化碳/氧化镁（001），氮/氧化镁（001）和氮/氯化钠（001）系统。
6. Surface determination through atomically resolved secondary-electron imaging [O] . J. Ciston, H. G. Brown, A. J. DAlfonso, -1

机译：通过原子分辨二次电子成像确定表面
7. Secondary-electron emission by 0.5-MeV/u H, He, and Li ions specularly reflected from a SnTe(001) surface: Possibility of the surface track potential reducing the secondary-electron yield at a semiconductor surface [O] . Kimura K, Usui S, Nakajima K 2000

机译：从SnTe（001）表面镜面反射的0.5-MeV / u H，He和Li离子的二次电子发射：表面走线电势可能会降低半导体表面的二次电子产率

Secondary-electron emission by 0.5-MeV/u H, He, and Li ions specularly reflected from a SnTe(001) surface: Possibility of the surface track potential reducing the secondary-electron yield at a semiconductor surface - art. no. 062902

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