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LASER ANNEAL TECHNOLOGY FOR POLY-SILICON DOPANT ACTIVATION ENHANCEMENT

机译：激光退火技术，用于增强多晶硅掺杂剂

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Poly depletion will cause problems for 65 nm technologies because it will account for an increasing fraction of T_(ox-inv) as gate lengths and gate dielectric thicknesses become smaller. Reducing poly depletion will be necessary to meet device performance requirements for future technology. For the 65 nm node, conventional solutions, like spike anneal, will fail to meet these requirements. One possible method for reducing poly depletion is laser annealing, which produces transient temperatures near the Si melting point within a few milliseconds. This results in high dopant activation with no dopant diffusion. We present a study of poly activation and material properties with non-melting laser anneal technology. Polysilicon was deposited using single-wafer Chemical Vapor Deposition tool on in-situ grown plasma-nitrided oxide. After boron implant and conventional RTA, the wafers were laser annealed. We have studied the effect of laser annealing temperature and time on dopant activation, dopant diffusion and poly structure change. The reduction of sheet resistance can be as great as 50%, which corresponds to a poly depletion reduction of ～1.8 A. This shows that non-melting laser annealing is an appealing solution for the 65 nm node.
机译：多晶硅耗尽将对65 nm技术造成问题，因为随着栅极长度和栅极介电层厚度变小，它会占T_（ox-inv）的增加部分。为了满足未来技术对器件性能的要求，必须减少多晶硅耗尽。对于65 nm节点，常规解决方案（如尖峰退火）将无法满足这些要求。减少多晶硅耗尽的一种可能方法是激光退火，它会在几毫秒内产生接近Si熔点的瞬态温度。这导致高掺杂剂活化而没有掺杂剂扩散。我们通过非熔融激光退火技术对多活化和材料性能进行了研究。使用单晶片化学气相沉积工具将多晶硅沉积在原位生长的等离子体氮化氧化物上。在硼注入和常规RTA之后，对晶片进行激光退火。我们研究了激光退火温度和时间对掺杂剂活化，掺杂剂扩散和多晶结构变化的影响。薄层电阻的降低可高达50％，这相当于约1.8 A的多晶硅耗尽减少。这表明，非熔融激光退火是65 nm节点的理想解决方案。

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