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首页> 外文会议>Proceedings of the 2011 6th IEEE International Conference on Nano/Micro Engineered and Molecular Systems >The crystallinity analysis of poly-Si film with different deposition sequences of aluminum and a-Si layers by aluminum induced crystallization method
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The crystallinity analysis of poly-Si film with different deposition sequences of aluminum and a-Si layers by aluminum induced crystallization method

机译：铝诱导结晶法分析铝层和非晶硅层沉积顺序不同的多晶硅膜的结晶度

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In our study, we fabricated polycrystalline silicon film by aluminum induced crystallization method. Two different sequences of aluminum (Al) and amorphous silicon (a-Si) layers were deposited on glass substrates. The a-Si film was deposited by plasma enhanced chemical vapor deposition (PECVD). The Al film was deposited by sputtering. The specimens were then annealed under 450 °C of annealing temperature for 7 hours. Al-etching process was performed on these annealed specimens to remove the Al content in the specimens. Optical microscopy (OM), Raman spectroscopy and Hall measurements were performed in order to analyze their crystallinity and electrical properties. Results shows that the mobility of poly-Si film for the specimens with the glass/Al(75 nm)/(Oxidation layer)/a-Si(85 nm) is not very good although the crystallinity is very good due to the discontinuous crystal growth of the poly-Si film. However, both the mobility and crystallinity are improved as the thicknesses of the a-Si/Al film thickness increase to 400/400 nm.
机译：在我们的研究中，我们通过铝诱导结晶法制备了多晶硅膜。铝（Al）和非晶硅（a-Si）层的两种不同顺序沉积在玻璃基板上。通过等离子体增强化学气相沉积（PECVD）沉积a-Si膜。通过溅射沉积Al膜。然后将样品在450°C的退火温度下退火7小时。在这些退火的样品上进行铝蚀刻工艺以去除样品中的铝含量。为了分析其结晶度和电性能，进行了光学显微镜（OM），拉曼光谱和霍尔测量。结果表明，虽然玻璃/ Al（75 nm）/（氧化层）/ a-Si（85 nm）的样品的多晶硅膜的迁移率不是很好，但是由于不连续的晶体，其结晶度非常好多晶硅膜的生长。然而，随着a-Si / Al膜厚度的厚度增加至400 / 400nm，迁移率和结晶度均得到改善。

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