Performance comparison of artificial intelligence networks in nanoscale MOSFET modeling

机译：人工智能网络在纳米MOSFET建模中的性能比较

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In this paper, different types of artificial intelligence networks were compared in order to simulate the nonlinear behavior of nanoscale MOSFETs. The accuracy of the approaches in determining the device drain current and the training time were discussed. The training data was generated in Hspice environment and imported in Matlab7.5 for simulation. Finally, optimized structures for accurate and fast device simulations were introduced individually.

机译：在本文中，比较了不同类型的人工智能网络，以模拟纳米级MOSFET的非线性行为。讨论了确定器件漏极电流和训练时间的方法的准确性。训练数据是在Hspice环境中生成的，并导入到Matlab7.5中进行仿真。最后，分别介绍了用于准确，快速进行设备仿真的优化结构。

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《2011 Seventh International Conference on Natural Computation》|2011年|p.807-810|共4页
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Nohoji Amir Hossein Abdollahi; Farokhi Fardad; Zamani Majid;
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正文语种
中图分类理论、方法;
关键词
Artificial intelligence network; MOSFET modeling; fuzzy system; neural network;

机译：人工智能网络MOSFET建模模糊系统神经网络;

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Performance comparison of artificial intelligence networks in nanoscale MOSFET modeling

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