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EFFECTIVE MINORITY CARRIER LIFETIME MEASURED IN QSS MODE AND SILICON SURFACE TREATMENTS

机译:在QSS模式和硅表面处理中测量的有效少数载体寿命

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We report on the impact of the optical constant uncertainty on quasi-steady-state (QSS) mode measured -effective minority carrier lifetime of silicon wafers using the Sinton WCT-120 lifetime tester. The optical constant enables evaluating the total carrier generation within the wafer and can be estimated by comparing the optical properties of the wafer and those of the reference cell of the lifetime tester. We establish that for chemically treated silicon surface an accurate knowledge of external and internal wafer properties is required to perfectly determine the generation rate.
机译:我们报告了使用Sinton WCT-120寿命测试仪的硅晶片的诸如稳态(QSS)模式测量的光学恒定不确定性的影响。光学常数使得能够评估晶片内的总载流子产生,并且可以通过比较晶片的光学性质和寿命测试仪的参考单元的光学性质来估计。我们确定,对于化学处理的硅表面,需要精确了解外部和内部晶片特性,以完全确定生成速率。

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