• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文会议>European Photovoltaic Solar Energy Conference and Exhibition >PHOSPHORUS REMOVAL IN BATCH SILICON REFINEMENT BY ELECTRON BEAM
【24h】

PHOSPHORUS REMOVAL IN BATCH SILICON REFINEMENT BY ELECTRON BEAM

机译：电子束中批量硅改进中的磷去除

获取原文
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Vacuum refinement of silicon from phosphorus doping by our earlier developed electron beam heating technique proved to be not efficient enough. A series of experiments were carried out in order to study dependencies of refinement of silicon from phosphorus on process parameters. Comparison to refinement from arsenic is provided, mechanism of phosphorus and arsenic removal is discussed. Evaporation in atomic form for arsenic and in both atomic and molecular - P_2 form for phosphorus are suggested. Kinetic constants for these processes are estimated. Both objective and characteristic for batch process reasons are suggested to hamper phosphorus removal. Efficiency of transport of silicon under refinement in earlier devised scheme of the process may lack efficiency. Also, process architecture which includes container may prevent surface overheating contributing to removal efficiency.
机译：通过我们之前开发的电子束加热技术从磷掺杂的硅的真空细化证明是不够有效的。进行了一系列实验，以研究从过程参数上从磷中改进硅的依赖性。提供了与砷的细化的比较，讨论了磷和砷的机制。提出了砷和原子和分子 - P_2形式的原子形式蒸发。估计这些过程的动力学常数。批处理原因的目的和特征都被提出妨碍磷去除。在早期设计方案的细化下，硅的运输效率可能缺乏效率。此外，包括容器的过程架构可以防止表面过热有助于去除效率。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号