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首页> 外文会议>European Photovoltaic Solar Energy Conference and Exhibition >SURFACE PHOTOVOLTAGE IN THIN FILMS OF Cu_2ZnSn(S_xSe_(1-x))_4 OBTAINED BY SPRAY PYROLYSIS
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SURFACE PHOTOVOLTAGE IN THIN FILMS OF Cu_2ZnSn(S_xSe_(1-x))_4 OBTAINED BY SPRAY PYROLYSIS

机译：通过喷雾热解（S_XSE_（1-x））薄膜的表面光电压（S_xSE_（1-x））_ 4

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Spectral and time dependent surface photovoltage (SPV) measurements were performed on Cu_2ZnSn(S_xSe_(1-x))_4 (CZTSSe) thin films prepared on ITO/glass substrates by spray pyrolysis at ambient atmosphere from aqueous solutions and subsequent selenization of Cu_2ZnSnS_4 (CZTS) layers. The morphology, stoichiometry and phases of the crystalline thin films were studied by electron microscopy, energy dispersive x-ray analysis and x-ray diffraction, respectively. The CZTSSe thin films show mostly the kesterite type CZTSSe phases and are slightly copper deficient. The Se/(S+Se) ratio amounted to about 0.27. The onset energies of SPV signals were observed at about 1.0 and 1.5 eV. The transition at 1.0 eV can be attributed to the SnSe secondary phase with an indirect band gap of 0.90 eV. The energy of 1.5 eV corresponds to the band gap of the CZTSSe with about 25 % of Se content. A slow relaxation process and a change of the sign set on at photon energies above 1.5 eV. Results are discussed in relation to the phase analysis.
机译：通过在来自水溶液中的环境大气中喷雾热解和随后的Cu_2ZnSNS_4（CZTS）在ITO /玻璃基板上制备的Cu_2ZNSN（S_XSE_（1-x））_ 4（CZTSSE）薄膜进行光谱和时间依赖性表面光电图（SPV）测量。 ）层。通过电子显微镜，能量分散X射线分析和X射线衍射研究了结晶薄膜的形态，化学计量和阶段。 CZTSSE薄膜主要显示KETERITE型CZTSSE相位，缺乏铜缺乏。 SE /（S + SE）比率为约0.27。在大约1.0和1.5eV中观察到SPV信号的发病能量。在1.0eV处的过渡可以归因于SNSE二级相位，间接带隙为0.90eV。 1.5 EV的能量对应于CZTSSE的带隙，约25％的SE含量。缓慢放松过程和在1.5 eV上方的光子能量上设置的标志的变化。结果是关于相位分析的讨论。

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