One of the major lines of solar energy development is the creation of environmentally friendly, wasteless and cheap solar-grade silicon production technology. Currently the main silicon production technologies are based on reduction of silicon hydrogen chloride compounds: trichlorosilane, tetrachlorosilane, monosilane. These technologies use harmful and potentially dangerous compounds in quantity. These productions can be profitable only at big volumes (more than 1000 tons per year). The present paper studies the method of plasma-chemical purification of metallurgical-grade silicon from impurities to the solar-grade level. The regularities between the process parameters and the efficiency of silicon purification from various impurities are determined. The plasma-chemical technology has a variety of advantages: lack of wastes; harmful and dangerous substances are not used in the silicon production process; low energy intensity; product low cost; wide range of production scaling.
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