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首页> 外文会议>European Photovoltaic Solar Energy Conference and Exhibition >THREE-TERMINAL TANDEM SOLAR CELLS COMBINING BOTTOM INTERDIGITATED BACK CONTACT AND TOP HETEROJUNCTION SUBCELLS: A NEW ARCHITECTURE FOR HIGH POWER CONVERSION EFFICIENCY
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THREE-TERMINAL TANDEM SOLAR CELLS COMBINING BOTTOM INTERDIGITATED BACK CONTACT AND TOP HETEROJUNCTION SUBCELLS: A NEW ARCHITECTURE FOR HIGH POWER CONVERSION EFFICIENCY

机译：三端子串联太阳能电池组合底部互连的背面接触和顶部异质结亚单元：用于高功率转换效率的新架构

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摘要

We describe the working principle of a three-terminal tandem solar cell that associates a silicon interdigitated back contact bottom cell with a top heterojunction cell. Illustrations are given and calculations are performed in two examples: (i) the bottom silicon absorber is n-type and the top absorber is a III-V compound with a p-type top layer forming a p-i-n heterojunction; in this case the n+ back contact layer is common to both cells and allows the extraction of electrons generated in both absorbers (ii) the bottom absorber is p-type and the top absorber is a MaPbI_3 perovskite; in this case the p+ back contact common to both cells allows the extraction of electrons generated in both absorbers. Of particular importance in the proposed 3-terminal architecture using a heterojunction subcell is the band alignment at the heterointerface that provides selective carrier transport. It is shown that, in the case of an n-type silicon bottom absorber, a selective interface buffer having a large valence band offset and a zero or negligible conduction band offset can significantly improve the photovoltaic performance. In the case of a p-type bottom silicon absorber, misalignment of the valence band should be avoided while a large conduction band offset provides selective electron extraction. The concept is promising since it can avoid some drawbacks of the two-terminal and four-terminal tandem cells while providing equivalent high conversion efficiencies.
机译：我们描述了三端子串联太阳能电池的工作原理，其将硅交叉的后接触底部电池与顶部异质结细胞相关联。给出了说明，并在两个实施例中进行计算：（i）底部硅吸收剂是n型，顶部吸收剂是具有p型顶层的III-V化合物，形成P-I-N异质结;在这种情况下，N +背面接触层对于两个细胞是常见的，并且允许在吸收器（II）中产生的电子提取底部吸收器是p型，顶部吸收器是MAPBI_3 PEROVSKITE;在这种情况下，两个单元共用的P +背面接触允许在两个吸收器中提取产生的电子。在使用异质结函数的提出的3终端架构中特别重要的是在提供选择性载波运输的异色面上的带对准。结果表明，在N型硅底吸收器的情况下，具有大价带偏移的选择性界面缓冲器和零或可忽略不计的导带偏移可以显着提高光伏性能。在P型底部硅吸收器的情况下，应避免价带的未对准，而大型导通带偏移提供选择性电子提取。该概念是有希望的，因为它可以避免双端子和四端子串联单元的一些缺点，同时提供等同的高转换效率。

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