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首页> 外文会议>European Photovoltaic Solar Energy Conference and Exhibition >Development of phosphorus thin doped layers by Plasma Immersion for Homo- Hetero junction solar cells application: Topic 2.3: Silicon Materials and Cells/heterojunction Solar Cells
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Development of phosphorus thin doped layers by Plasma Immersion for Homo- Hetero junction solar cells application: Topic 2.3: Silicon Materials and Cells/heterojunction Solar Cells

机译：通过等离子体浸泡的磷薄掺杂层进行同源偏差的磷薄掺杂层应用：主题2.3：硅材料和细胞/异质结太阳能电池

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Introducing a thin inverted doped layer at the interface between the intrinsic amorphous silicon (a-Si:H) and the crystalline silicon (c-Si) surface seems to be a promising solution to overcome the so-called inversion layer issues which can impact negatively the carrier transport and though the FF in the classical heterojunction technology (SHJ). The emerging homo-heterojunction (H-H) solar cell architecture presented in this work is based on the classical heterojunction adding thin and highly doped - c-Si layers (either (p~+) or (n~+)) at the front and/or back a-Si:H/c-Si interface. In this work, we study the formation of thin phosphorus doped layers realized by the innovative Plasma Immersion Ion Implantation (PIII) approach to improve the front-side of a rear-emitter device. Impact of both the implantation and the subsequent anneal steps have been investigated for different implantation doses and annealing temperatures not to degrade the whole device. Then, H-H solar cells have been processed integrating the thin phosphorus doped layer into the standard SHJ process flow available on the CEA-INES pilot line and compared with standard SHJ cells. It is found that H-H architecture exhibit higher performances than standard SHJ solar cells (+0.1%), especially in terms of V_(oc) and passivation. However, a non-understood limitation of the FF is limiting the full potential of this emerging concept and further work is currently ongoing to better understand this limitation and optimize the process flow adapted to the H-H concept.
机译：在内在非晶硅（A-Si：H）之间的界面处引入薄倒掺杂层，结晶硅（C-Si）表面似乎是克服可能影响的所谓反转层问题的有希望的解决方案载波运输以及经典异质结技术（SHJ）中的FF。本作作品中提供的新兴的同性恋异质（HH）太阳能电池架构基于典型的异质结，添加薄且高度掺杂的C-Si层（（P〜+）或（N〜+））和/或返回A-Si：H / C-Si接口。在这项工作中，我们研究了通过创新的等离子体浸没离子注入（PIII）方法实现的薄磷掺杂层的形成来改善后发射器装置的前侧。已经研究了植入和随后的退火步骤的影响，以针对不同的植入剂量和退火温度降解整个装置。然后，已经将H-H太阳能电池加工将薄的磷掺杂层与CEA-INES试点线上的标准SHJ工艺流程进行整合到标准SHJ工艺流程中，并与标准SHJ细胞进行比较。发现H-H架构比标准SHJ太阳能电池（+ 0.1％）表现出更高的性能，特别是在V_（OC）和钝化方面。然而，对FF的非理解限制限制了这种新兴概念的全部潜力，并且目前正在进行进一步的工作以更好地理解这种限制并优化适应于H-H概念的过程流程。

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