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首页> 外文会议>IEEE Photovoltaic Specialists Conference >MoSe_2 Formation During Fabrication of Cu(In,Ga)Se_2 Solar Cell Absorbers by Using Stacked Elemental Layer Precursor and Selenization at High Temperatures
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MoSe_2 Formation During Fabrication of Cu(In,Ga)Se_2 Solar Cell Absorbers by Using Stacked Elemental Layer Precursor and Selenization at High Temperatures

机译：通过在高温下使用堆叠的元素层前体和硒化在Cu（In，Ga）Se_2 Se_2太阳能电池吸收剂期间形成MOSE_2

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摘要

Cu(In,Ga)Se_2 solar cell absorbers are prepared on a Mo-coated glass substrate by using a sequential process consisting of a sputter deposition of an In/CuGa/In metal precursor, subsequent PVD deposition of a Se layer and annealing in N_2 atmosphere. The Se concentration in the final layer stack was found to be relatively up to 20 % higher than expected. The excess Se is bound in a MoSe2 layer with laterally varying thickness, between the absorber and the Mo back contact. Such a layer can lead to an increase in the series resistance of the completed solar cells. By pumping at a specific time, we were able to reduce the Se partial pressure selectively during the selenization. For a constant annealing time, we find that the MoSe_2 thickness increases with the time in which a high Se partial pressure is maintained, i.e., the time before the selective pumping. A significant reduction of the Se partial pressure after half the annealing time led to solar cells with the smallest series resistance and overall best conversion efficiency. We further found that the addition of NaF before the annealing led to comparatively thin MoSe_2 layers. This suggests that the Na incorporation from the glass substrate in our process is too small to hinder the MoSe_2 growth. A more specific control of the Na supply is required in our process to manipulate the MoSe_2 growth and the doping density in the absorber.
机译：通过使用由In / Cuga / In金属前体的溅射沉积组成的顺序处理，在Mo涂覆的玻璃基板上制备Cu（族，Ga）Se_2太阳能电池吸收剂，随后的PVD沉积A SE层并在N_2中退火大气层。发现最终层堆叠中的SE浓度比预期的相对高达20％。过量的SE在吸收器和Mo背触头之间具有横向变化的厚度的MOSE2层中。这种层可以导致完成太阳能电池的串联电阻的增加。通过在特定时间泵送，我们能够在硒化期间选择性地减少SE分压。对于恒定的退火时间，我们发现MOSE_2厚度随着在选择泵浦之前的时间压力维持的时间而增加。在退火时间的一半后，SE分压的显着降低导致具有最小串联电阻和整体最佳转换效率的太阳能电池。我们进一步发现在退火之前添加NAF导致相对薄的MOSE_2层。这表明在我们的过程中从玻璃基板中掺入太小而不能阻碍MOSE_2生长。在我们的过程中需要更具体地控制Na供应，以操纵吸收器中的MOSE_2生长和掺杂密度。

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