首页> 外文会议>IEEE Photovoltaic Specialists Conference >MODELING THE EFFECTS OF 1 MEV ELECTRON RADIATION IN GALLIUM-ARSENIDE SOLAR CELLS USING SILVACO VIRTUAL WAFER FABRICATION SOFTWARE
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MODELING THE EFFECTS OF 1 MEV ELECTRON RADIATION IN GALLIUM-ARSENIDE SOLAR CELLS USING SILVACO VIRTUAL WAFER FABRICATION SOFTWARE

机译:利用Silvaco虚拟晶片制造软件对砷化镓太阳能电池溶液中1 MeV电子辐射的影响建模

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The ALTAS device simulator from Silvaco International has the potential for predicting the effects of electron radiation in solar cells by modeling material defects. A GaAs solar cell was simulated in ATLAS and compared to an actual cell with radiation defects identified using deep level transient spectroscopy techniques (DLTS). The solar cells were compared for various fluence levels of 1 MeV electron radiation and showed an average of less than three percent difference between experimental and simulated cell output characteristics. These results demonstrate that ATLAS software can be a viable tool for predicting solar cell degradation due to electron radiation.
机译:Silvaco International的Altas设备模拟器具有通过建模材料缺陷来预测电子辐射在太阳能电池中的影响。在地图集中模拟了GaAs太阳能电池,并与使用深度瞬态透射技术(DLT)识别的具有辐射缺陷的实际电池进行比较。比较太阳能电池,以各种流量水平为1meV电子辐射,并且在实验和模拟电池输出特性之间的平均差异小于3%。这些结果表明,由于电子辐射,阿特拉斯软件可以是预测太阳能电池降解的可行工具。

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