Multi-MGy Total Ionizing Dose Induced MOSFET Variability Effects on Radiation Hardened CMOS Image Sensor Performances

机译：多变量的总电离剂量诱导MOSFET可变性辐射的变化效应硬化CMOS图像传感器性能

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MOSFETs variability in irradiated CIS up to 10 MGy(SiO₂) is statistically investigated on about 65000 devices. Different variability sources are identified and the role played by the transistors composing the readout chain is clarified.

机译：MOSFET辐照的CIS可变异，最高可达10吨（SIO_{2 ）在大约65000个设备上进行统计研究。鉴定了不同的可变性来源，并阐明了构成读出链的晶体管播放的作用。}

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《European Conference on Radiation and Its Effects on Components and Systems》|2017年|549p|共4页
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Serena Rizzolo; Vincent Goiffon; Marius Sergent; Franck Corbière; Sébastien Rolando; Aziouz Chabane; Philippe Paillet; Claude Marcandella; Sylvain Girard; Pierre Magnan; Marco Van Uffelen; Laura Mont Casellas; Robin Scott; Wouter De Cock;
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中图分类 TN014-53;
关键词
MOSFET; Degradation; Voltage measurement; Total ionizing dose; Radiation hardening (electronics);

机译：MOSFET;降解;电压测量;全电离剂量;辐射硬化（电子）;

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1. Multi-MGy Radiation Hard CMOS Image Sensor: Design, Characterization and X/Gamma Rays Total Ionizing Dose Tests [J] . Goiffon Vincent, Corbiere Franck, Rolando Sebastien, Nuclear Science, IEEE Transactions on . 2015,第6期

机译：Multi-MGy辐射硬CMOS图像传感器：设计，表征和X / Gamma射线总电离剂量测试
2. Radiation Hardening of Digital Color CMOS Camera-on-a-Chip Building Blocks for Multi-MGy Total Ionizing Dose Environments [J] . Vincent Goiffon, Sébastien Rolando, Franck Corbière, Nuclear Science, IEEE Transactions on . 2017,第1期

机译：用于多MGy总电离剂量环境的数字彩色CMOS片上相机构建基块的辐射硬化
3. Annealing Effects on Radiation-Hardened CMOS Image Sensors Exposed to Ultrahigh Total Ionizing Doses [J] . H. Dewitte, S. Rizzolo, P. Paillet, IEEE Transactions on Nuclear Science . 2020,第7期

机译：对辐射硬化的CMOS图像传感器暴露于超高压总电离剂量的退火效应
4. Multi-MGy Total Ionizing Dose Induced MOSFET Variability Effects on Radiation Hardened CMOS Image Sensor Performances [C] . Serena Rizzolo, Vincent Goiffon, Marius Sergent, European Conference on Radiation and Its Effects on Components and Systems . 2017

机译：Multi-MGy总电离剂量诱导的MOSFET可变性对辐射硬化CMOS图像传感器性能的影响
5. Single event transient and total ionizing dose effects on III-V MOSFETs for sub-10 nm node CMOS. [D] . Ni, Kai. 2016

机译：单事件瞬态和总电离剂量对低于10 nm节点CMOS的III-V MOSFET产生影响。
6. Performance Improvement of Total Ionization Dose Radiation Sensor Devices Using Fluorine-Treated MOHOS [O] . Wen-Ching Hsieh, Hao-Tien Daniel Lee, Fuh-Cheng Jong, 2016

机译：使用氟处理的MOHOS改善总电离剂量辐射传感器的性能
7. Multi-MGy Radiation Hardened CMOS Image Sensor: Design, Characterization and X/Gamma Rays Total Ionizing Dose Tests [O] . Goiffon, Vincent, Corbière, Franck, Rolando, Sébastien, 2015

机译：Multi-MGy辐射硬化CMOS图像传感器：设计，表征和X / Gamma射线总电离剂量测试
8. CMOS Devices Hardened Against Total Dose Radiation Effects. [R] . Summers, G. 2000

机译：CmOs器件强化总剂量辐射效应。

Multi-MGy Total Ionizing Dose Induced MOSFET Variability Effects on Radiation Hardened CMOS Image Sensor Performances

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