Comparison of Single Event Transients in AlGaN/GaN Schottky-Gate HEMTs Using Four Sources for Charge Injection

机译：使用四个电荷注射源的AlGaN / GaN Schottky-栅极HEMT中单事件瞬变的比较

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摘要

The shapes of single-event transients produced by heavy ions, focused pulsed laser-light, and focused pulsed x-rays in an AlGaN/GaN HEMT were compared.

机译：比较了由重离子，聚焦脉冲激光和在AlGaN / GaN HEMT中聚焦脉冲X射线产生的单事件瞬变的形状。

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《European Conference on Radiation and Its Effects on Components and Systems》|2017年|549p|共4页
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A. Khachatrian; N. J-H Roche; S. Buchner; A. D. Koehler; T. J. Anderson; K. D. Hobart; D. McMorrow; S. D. LaLumondiere; N. P. Wells; M. A. Tockstein; E. C. Dillingham; J. P. Bonsall; P. Karuza; W. T. Lotshaw; S. C. Moss; D. L. Brewe; V. Ferlet-Cavrois; M. Mushitiello;
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中图分类 TN014-53;
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Ions; Logic gates; Aluminum gallium nitride; Wide band gap semiconductors; Photonics; X-rays; HEMTs;

机译：离子;逻辑门;氮化铝镓;宽带隙半导体;光子学;X射线;HEMTS;

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专利

1. Spatial Mapping of Pristine and Irradiated AlGaN/GaN HEMTs With UV Single-Photon Absorption Single-Event Transient Technique [J] . Ani Khachatrian, Nicolas J-H. Roche, Stephen P. Buchner, IEEE Transactions on Nuclear Science . 2016,第4期

机译：UV单光子吸收单事件瞬态技术对原始和辐射AlGaN / GaN HEMT的空间映射
2. Impact of heavy ion particle strike induced single event transients on conventional and π-Gate AlGaN/GaN HEMTs [J] . Sehra Khushwant, Kumari Vandana, Gupta Mridula, Semiconductor science and technology . 2021,第3期

机译：重离子粒子攻击诱导的单一事件瞬变对常规和π门Algan / GaN Hemts的影响
3. Investigation of Single-Event Transients in AlGaN/GaN MIS-Gate HEMTs Using a Focused X-Ray Beam [J] . Khachatrian A., Roche N. J. -H., Buchner S. P., IEEE Transactions on Nuclear Science . 2019,第1期

机译：使用聚焦的X射线束研究AlGaN / GaN MIS-Gate HEMT中的单事件瞬态
4. Comparison of Single Event Transients in AlGaN/GaN Schottky-Gate HEMTs Using Four Sources for Charge Injection [C] . A. Khachatrian, N. J-H Roche, S. Buchner, European Conference on Radiation and Its Effects on Components and Systems . 2017

机译：使用四个电荷注入源的AlGaN / GaN肖特基栅极HEMT中单事件瞬态的比较
5. Analysis of Heat Dissipation in AlGaN/GaN HEMT with GaN Micropits at GaN-SiC Interface [D] . Suri, Suraj. 2016

机译：GaN-SiC界面处具有GaN微坑的AlGaN / GaN HEMT中的散热分析
6. High breakdown voltage in AlGaN/GaN HEMTs using AlGaN/GaN/AlGaN quantum-well electron-blocking layers [O] . Ya-Ju Lee, Yung-Chi Yao, Chun-Ying Huang, 2014

机译：使用AlGaN / GaN / AlGaN量子阱电子阻挡层的AlGaN / GaN HEMT中的高击穿电压
7. The Study of the Single Event Effect in AlGaN/GaN HEMT Based on a Cascode Structure [O] . Yanan Liang, Rui Chen, Jianwei Han, 2021

机译：基于Cascode结构的Algan / GaN Hemt中的单一事件效应研究

Comparison of Single Event Transients in AlGaN/GaN Schottky-Gate HEMTs Using Four Sources for Charge Injection

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