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首页> 外文会议>European Conference on Radiation and Its Effects on Components and Systems >Analysis of Image Lag Degradation in PPD CISs Induced by Total Ionizing Dose and Displacement Radiation Damage
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Analysis of Image Lag Degradation in PPD CISs Induced by Total Ionizing Dose and Displacement Radiation Damage

机译：总电离剂量和位移辐射损伤诱导PPD CIS的图像滞后降解分析

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摘要

The experiments of the total ionizing dose (TID) and displacement radiation effects on the pinned photodiode (PPD) CMOS image sensors (CISs) are presented. The CISs are manufactured using a standard 0.18 μm CMOS technology with 4 Megapixels and 4-transistor PPD pixel architecture. The image lag degradation induced by TID damage is analyzed by exposing the 60Co γ rays with different biased conditions. The experimental results show that the degradation of the biased CIS are more severe than that of the unbiased CIS. The image lag degradation versus the TID at the dose rates of 0.1, 1.0 and 10.0 rad(Si)/s are compared. The image lag degradation induced by displacement damage is also investigated by the proton and neutron radiation. The image lag degradation mechanisms caused by 60Co γ ray, proton, and neutron radiation are analyzed with the TCAD simulation and the radiation particle transportation simulation using GEANT 4.
机译：呈现了对钉扎光电二极管（PPD）CMOS图像传感器（CISS）的总电离剂量（TID）和位移辐射效应的实验。 CISS是使用标准的0.18μmCMOS技术制造，具有4百万像素和4晶体管PPD像素架构。通过暴露出来的TID损坏引起的图像滞后降解 60 具有不同偏见条件的COγ光线。实验结果表明，偏置顺式的降解比无偏的顺式的偏重更严重。比较图像滞后与0.1,1.0和10.0 rad（Si）/ s的剂量率下的TID降解。通过质子和中子辐射还研究了由位移损伤引起的图像滞后降解。造成的图像滞后劣化机制 60 使用GEANT 4分析COγ射线，质子和中子辐射和辐射颗粒输送模拟。

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