Radiation Hardness Studies on a Novel CMOS Process for Depleted Monolithic Active Pixel Sensors

机译：用于耗尽整体活性像素传感器的新型CMOS工艺的辐射硬度研究

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Monolithic CMOS sensors are being proposed for the upgrade of the ATLAS inner tracker. Sensors fabricated in a new TowerJazz 180nm process, feature full depletion of the sensitive layer and radiation tolerance up to 10^{15n_eq/cm^2.}

机译：正在提出单片CMOS传感器，用于升级ATLAS内部跟踪器。在新的塔楼180nm工艺中制造的传感器，具有敏感层和辐射容差的完全耗尽，最多可容纳10^{15 N._{eq /厘米^{2 。}}}

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《European Conference on Radiation and Its Effects on Components and Systems》|2017年|549p|共7页
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Enrico Junior Schioppa; Richard Bates; Craig Buttar; Marco Dalla; Jacobus Willem Van Hoorne; Thanushan Kugathasan; Dzmitry Maneuski; Cesar Augusto Marin Tobon; Luciano Musa; Heinz Pernegger; Petra Riedler; Christian Riegel; Carla Sbarra; Douglas Michael Schaefer; Abhis;
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中图分类 TN014-53;
关键词
Electrodes; Radiation effects; Detectors; Semiconductor device measurement; Standards; Charge measurement; Substrates;

机译：电极;辐射效应;探测器;半导体器件测量;标准;电荷测量;基板;

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专利

1. First tests of a novel radiation hard CMOS sensor process for Depleted Monolithic Active Pixel Sensors [J] . H. Pernegger, R. Bates, C. Buttar, Journal of instrumentation: an IOP and SISSA journal . 2017,第6期

机译：用于耗尽整体活性像素传感器的新型辐射硬CMOS传感器过程的首次试验
2. A process modification for CMOS monolithic active pixel sensors for enhanced depletion, timing performance and radiation tolerance [J] . W. Snoeys, G. Aglieri Rinella, H. Hillemanns, Nuclear Instruments & Methods in Physics Research . 2017,第nova1期

机译：CMOS单块有源像素传感器的工艺改进，以增强耗尽，定时性能和辐射耐受性
3. CMOS monolithic active pixel sensors (MAPS) for scientific applications: Some notes about radiation hardness [J] . R. Turchetta Nuclear Instruments & Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment . 2007,第1期

机译：用于科学应用的CMOS单片有源像素传感器（MAPS）：关于辐射硬度的一些注意事项
4. Radiation Hardness Studies on a Novel CMOS Process for Depleted Monolithic Active Pixel Sensors [C] . Enrico Junior Schioppa, Richard Bates, Craig Buttar, European Conference on Radiation and Its Effects on Components and Systems . 2017

机译：用于耗尽型单片有源像素传感器的新型CMOS工艺的辐射硬度研究
5. On-chip spatial image processing with CMOS active pixel sensors. [D] . Hong, Canaan Sungkuk. 2001

机译：使用CMOS有源像素传感器的片上空间图像处理。
6. Monolithic Active Pixel Sensors (MAPS) in a Quadruple Well Technology for Nearly 100 Fill Factor and Full CMOS Pixels [O] . Jamie Alexander Ballin, Jamie Phillip Crooks, Paul Dominic Dauncey, 2008

机译：采用四阱技术的单片有源像素传感器（MAPS）可实现接近100％的填充因子和完整的CMOS像素
7. Non-ionizing radiation hardness of CMOS Monolithic Active Pixel Sensors manufactured in a 0.18$mu$m CMOS process [O] . Doering D., Deveaux M., Linnik B., 2015

机译：采用0.18美元/微米CMOS工艺制造的CMOS单片有源像素传感器的非电离辐射硬度

Radiation Hardness Studies on a Novel CMOS Process for Depleted Monolithic Active Pixel Sensors

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