首页> 外文会议>International Conference on Solid-State Sensors, Actuators and Microsystems >ANALYSIS OF COTTON-LIKE SILICA CONTAMINANTS INDUCED BY OXYGEN CONTAINING PLASMA STRIPPING OF ORGANIC STRUCTURES ON SILICON WAFER
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ANALYSIS OF COTTON-LIKE SILICA CONTAMINANTS INDUCED BY OXYGEN CONTAINING PLASMA STRIPPING OF ORGANIC STRUCTURES ON SILICON WAFER

机译:含氧含氧含氧含硅污染物硅晶片的含氧含硅溶液分析

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The issue of unwanted cotton-like silica contaminants formed in oxygen containing plasma stripping of organic sacrificial structures on Si substrates is discussed in this paper. The mechanism is developed with specific reference to three common polymer materials in oxygen plasma etching, which is an indispensable process in most MEMS/IC fabrications. The experiments support that exposed silicon, organic structure, plasma bombardment and oxygen containing environment are four essential factors; and the density and shape of the silica residues are mostly determined by the original vertical and planar dimensions of the organic structures. More experiment results manifest that the residues can be avoided or removed with proper methods.
机译:本文讨论了在Si衬底上含氧血浆剥离中形成的含氧血浆剥离的不需要的棉状二氧化硅污染物的问题。该机构是用特定参考氧等离子体蚀刻中的三种普通聚合物材料进行开发的机理,这是大多数MEMS / IC制造中的不可缺少的方法。实验支持,暴露的硅,有机结构,等离子体轰击和含氧环境是四个必要因素;并且二氧化硅残留物的密度和形状主要由有机结构的原始垂直和平面尺寸决定。更多的实验结果表明,可以用适当的方法避免或除去残留物。

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