Electrical Characterization of Electrodeposited Co/p-Si Schottky Diodes

机译：电沉积CO / P-Si肖特基二极管的电气表征

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Schottky diodes were prepared by photoinduced electrodeposition of Co on p-Si, probing the influence of different concentrations of CoSO{sub}4 (26 and 104 mM) in the electrolyte on the electrical quality of the metal-semiconductor interface. Current-voltage (I×V) measurements were performed in diodes with different thickness to obtain the barrier heights and ideality factors, based on thermionic emission theory. Devices with improved properties were obtained by increasing the thickness of cobalt. Saturation currents with values of about 0.1 mA were obtained for thick metallic layers. By increasing thickness of cobalt was also possible to observe ideality factors close to 1.19 in diodes exhibiting barrier heights of 0.65 eV.

机译：通过P-Si上的CO在P-Si上的光诱导电沉积来制备肖特基二极管，探测电解质中不同浓度的COSO {SUB} 4（26和104mm）对金属半导体界面的电质质量的影响。在具有不同厚度的二极管中进行电流电压（I×V）测量，以获得基于热离子发射理论的屏障高度和理想因素。通过增加钴的厚度获得具有改善性质的装置。为厚金属层获得具有约0.1mA值的饱和电流。通过增加钴的厚度，也可以观察在表现出0.65eV的屏障高度的二极管中接近1.19的理想性因素。

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《Symposium on Microelectronics Technology and Devices》|2008年||共5页
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R. Zandonay; R. G. Delatorre; A. A. Pasa;
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Electrical Characterization of Electrodeposited Co/p-Si Schottky Diodes

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