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首页> 外文会议>Microelectronics Technology and Devices-SBMicro 2008 >Electrical Characterization of Electrodeposited Co/p-Si Schottky Diodes
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Electrical Characterization of Electrodeposited Co/p-Si Schottky Diodes

机译：电沉积Co / p-Si肖特基二极管的电学特性

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摘要

Schottky diodes were prepared by photoinduced electrodeposition of Co on p-Si, probing the influence of different concentrations of CoSO_4 (26 and 104 mM) in the electrolyte on the electrical quality of the metal-semiconductor interface. Current-voltage (I×V) measurements were performed in diodes with different thickness to obtain the barrier heights and ideality factors, based on thermionic emission theory. Devices with improved properties were obtained by increasing the thickness of cobalt. Saturation currents with values of about 0.1 mA were obtained for thick metallic layers. By increasing thickness of cobalt was also possible to observe ideality factors close to 1.19 in diodes exhibiting barrier heights of 0.65 eV.
机译：通过在p-Si上光诱导电沉积Co来制备肖特基二极管，并探索电解质中不同浓度的CoSO_4（26和104 mM）对金属-半导体界面的电气质量的影响。基于热离子发射理论，在具有不同厚度的二极管中进行了电流-电压（I×V）测量，以获得势垒高度和理想因子。通过增加钴的厚度可以获得具有改善的性能的器件。对于厚金属层，获得了约0.1 mA的饱和电流。通过增加钴的厚度，在势垒高度为0.65 eV的二极管中，也可以观察到接近1.19的理想因子。

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  • 来源
  • 会议地点 Gramado(BR);Gramado(BR);Gramado(BR);Gramado(BR);Gramado(BR);Gramado(BR)
  • 作者

    R. Zandonay; R. G. Delatorre; A. A. Pasa;

  • 作者单位

    Laboratorio de Filmes Finos e Superficies, Departamento de Fisica, Universidade Federal de Santa Catarina, Florianopolis, Santa Catarina 88040-900, Brazil;

    Laboratorio de Filmes Finos e Superficies, Departamento de Fisica, Universidade Federal de Santa Catarina, Florianopolis, Santa Catarina 88040-900, Brazil;

    Laboratorio de Filmes Finos e Superficies, Departamento de Fisica, Universidade Federal de Santa Catarina, Florianopolis, Santa Catarina 88040-900, Brazil;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 微电子学、集成电路（IC）;
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