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首页> 外文会议>IEEE Photovoltaic Specialists Conference >Design constraints of n-p InGaAsN dilute nitride sub-cells for 3- and 4- junction solar cell applications under concentrated illumination
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Design constraints of n-p InGaAsN dilute nitride sub-cells for 3- and 4- junction solar cell applications under concentrated illumination

机译：集中照明下用于3结和4结太阳能电池应用的n-p InGaAsN稀氮化物子电池的设计约束

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摘要

Solar cells with an n-p structure consisting of an InGaAsN dilute nitride emitter with n-type background doping and a p-type doped InGaAsN base are numerically simulated on GaAs and Ge substrates. The InGaAsN material parameters are chosen based on of structures reported in the literature. The short-circuit current of cells on GaAs substrates is 11% greater than similar designs on Ge substrates due to an increased photon path length. The current density to optical intensity ratio of 0.135 A/W, required to match the operating current density of an InGaP/InGaAs/InGaAsN 3-junction solar cell, is readily obtained for devices on GaAs substrates, but the required current density is not attainable when a Ge substrate is used. The InGaAsN sub-cell demonstrates enhanced performance for increasing levels of concentration up to 1000 suns. Open-circuit voltage increases near logarithmically with concentration, and the ratio of maximum-power point current to short-circuit current is constant at 82% between 10 and 1000 suns.
机译：在GaAs和Ge衬底上对包含n型背景掺杂的InGaAsN稀氮化物发射极和p型掺杂的InGaAsN基组成的n-p结构的太阳能电池进行了数值模拟。基于文献中报道的结构来选择InGaAsN材料参数。由于光子路径长度的增加，GaAs衬底上的单元的短路电流比Ge衬底上的类似设计大11％。与InGaP / InGaAs / InGaAsN三结太阳能电池的工作电流密度相匹配所需的电流密度与光强度之比为0.135 A / W，对于在GaAs衬底上的器件很容易获得，但无法达到所需的电流密度当使用Ge衬底时。 InGaAsN子电池表现出增强的性能，可将浓度提高到1000个太阳。开路电压随浓度成对数近似增加，并且最大功率点电流与短路电流之比在10至1000个太阳之间恒定为82％。

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