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Strain balanced double quantum well tunnel junctions

机译：应变平衡双量子阱隧道结

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Quantum well tunnel junctions have been shown to improve the performance of tunnel junctions within a concentrator solar cell with low absorption loss. In this work, we have demonstrated a strain balanced quantum well which may be used to incorporate materials within the tunnel junction which have more desirable bandgaps without any degradation in material properties. Our strained InAlAs/InGaAs QWTJ strain balanced to an InP substrate shows dramatically improved performance improvement over the baseline device in peak tunneling current and a 45,000x improvement in differential resistance.
机译：量子阱隧道结已被证明可以改善聚光太阳能电池中隧道结的性能，且吸收损耗低。在这项工作中，我们已经证明了应变平衡量子阱，该阱可以用于在隧道结内掺入具有更理想带隙的材料，而不会降低材料性能。与InP衬底平衡的应变InAlAs / InGaAs QWTJ应变在峰值隧穿电流方面比基线器件显着改善了性能，在差分电阻方面提高了45,000倍。

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