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p#x002B; Emitters on n-type c-Si using rapid thermal annealing of PECVD a-Si films and aluminum metallization

机译：通过PECVD a-Si膜的快速热退火和铝金属化在n型c-Si上的p +发射极

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We present the development and characterization of n-type mono-Si photovoltaic cells with p+ emitters formed by the rapid thermal annealing of PECVD boron-doped amorphous silicon (a-Si) films. Aluminum metallization was deposited from evaporator and sputtering tool sources. The process yielded emitters of excellent uniformity (average non-uniformity of 4.4% over 40 samples) with sheet resistance ranging from 53 Ω/□ to 249 Ω/□ inversely dependent on the thickness of p+ film annealed. A reasonably-low post-anneal series resistance of 0.602 Ω∗cm² suggests that all-aluminum metallization is sufficient for silicon photovoltaic cells of high efficiency.

机译：我们介绍了通过PECVD掺硼非晶硅（a-Si）薄膜的快速热退火形成的具有p +发射极的n型单晶硅光伏电池的开发和表征。从蒸发器和溅射工具源沉积铝金属化层。该工艺产生的发射极具有出色的均匀性（40个样品的平均不均匀度为4.4％），其薄层电阻范围为53Ω/□至249Ω/□，反之取决于退火的p +膜的厚度。 0.602Ω* cm ^{2 的较低的退火后串联电阻表明，全铝金属化足以满足高效率的硅光伏电池的需求。}

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《IEEE Photovoltaic Specialists Conference》|2013年|2257-2262|共6页
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Reblitz T.; Tracy C.; Dauksher B.; Herasimenka S. more authors;
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PECVD; RTA; amorphous semiconductors; boron; etching; photovoltaic cells;

机译：PECVD; RTA;非晶半导体;硼;刻蚀;光伏电池;

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专利

1. Influence of annealing temperature on the properties of polycrystalline silicon films formed by rapid thermal annealing of a-Si:H films [J] . Lei Zhang, Honglie Shen, Xuefan Jiang, Journal of materials science . 2013,第11期

机译：退火温度对通过a-Si：H薄膜快速热退火形成的多晶硅薄膜的性能的影响
2. Surface passivation of boron emitters on n-type c-Si solar cells using silicon dioxide and a PECVD silicon oxynitride stack [J] . Balaji Nagarajan, Lee Seunghwan, Park Cheolmin, RSC Advances . 2016,第74期

机译：使用二氧化硅和PECVD氧氮化硅叠层N型C-Si太阳能电池硼发射器的表面钝化
3. Rapid thermal annealing of hot wire chemical-vapor-deposited a-Si:H films: The effect of the film hydrogen content on the crystallization kinetics, surface morphology, and grain growth [J] . A. H. Mahan, B. Roy, R. C. Reedy Jr., Journal of Applied Physics . 2006,第2期

机译：热线化学气相沉积a-Si：H膜的快速热退火：膜中氢含量对结晶动力学，表面形态和晶粒生长的影响
4. p#x002B; Emitters on n-type c-Si using rapid thermal annealing of PECVD a-Si films and aluminum metallization [C] . Reblitz T., Tracy C., Dauksher B., IEEE Photovoltaic Specialists Conference . 2013

机译：使用PECVD A-Si薄膜的快速热退火和铝金属化的N型C-Si上的P +发射器
5. Pulsed laser annealing and rapid thermal annealing of copper-indium-gallium-diselenide-based thin film solar cells. [D] . Wang, Xuege. 2005

机译：基于铜-铟-镓-二硒化物的薄膜太阳能电池的脉冲激光退火和快速热退火。
6. The impact of thickness and thermal annealing on refractive index for aluminum oxide thin films deposited by atomic layer deposition [O] . Zi-Yi Wang, Rong-Jun Zhang, Hong-Liang Lu, 2015

机译：厚度和热退火对原子层沉积氧化铝薄膜折射率的影响
7. Hydrogen Plasma and Thermal Annealing Treatments on a-Si:H Thin Film for c-Si Surface Passivation [O] . Serenelli Luca, Chierchia Rosa, Izzi Massimo, 2014

机译：c-Si表面钝化的a-Si：H薄膜上的氢等离子体和热退火处理

p#x002B; Emitters on n-type c-Si using rapid thermal annealing of PECVD a-Si films and aluminum metallization

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