Isolation and characterization of large-area GaSb membranes grown on GaAs substrates

机译：在GaAs衬底上生长的大面积GaSb膜的分离和表征

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We investigate substrate removal techniques for GaSb epilayers grown on GaAs substrates. The GaSb epilayers are grown metamorphically on the GaAs substrate by inducing large areas of 90° interfacial misfit dislocation arrays at the GaSb/GaAs interface. Three structures have been investigated, each with a different etch stop process such that the GaAs substrate is removed without affecting the GaSb epi-layer. The GaSb membranes upon isolation are characterized for crystal quality using x-ray diffraction and for surface quality using atomic force microscopy.

机译：我们研究了生长在GaAs衬底上的GaSb外延层的衬底去除技术。通过在GaSb / GaAs界面处诱导大面积的90°界面失配位错阵列，GaSb外延层在GaAs衬底上变质生长。已经研究了三种结构，每种结构具有不同的蚀刻停止工艺，从而可以在不影响GaSb外延层的情况下去除GaAs衬底。分离后的GaSb膜的特征是使用X射线衍射的晶体质量和表面质量的原子力显微镜。

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《IEEE Photovoltaic Specialists Conference》|2013年|2459-2461|共3页
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Renteria E.J.; Ahirwar P.; Clark S.P.R.; Romero O.S. more authors;
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III-V semiconductor materials; semiconductor epitaxial layers; semiconductor growth;

机译：III-V族半导体材料;半导体外延层;半导体生长;

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专利

1. Isolating GaSb Membranes Grown Metamorphically on GaAs Substrates Using Highly Selective Substrate Removal Etch Processes [J] . Renteria E. J., Muniz A. J., Addamane S. J., Journal of Electronic Materials . 2015,第5期

机译：使用高选择性衬底去除刻蚀工艺隔离在GaAs衬底上变质生长的GaSb膜
2. Isolating GaSb Membranes Grown Metamorphically on GaAs Substrates Using Highly Selective Substrate Removal Etch Processes [J] . E. J. Renteria, A. J. Muniz, S. J. Addamane, Journal of Electronic Materials . 2015,第5期

机译：使用高选择性衬底去除刻蚀工艺隔离在GaAs衬底上变质生长的GaSb膜
3. Characterization of Cd1-xZnxTe (0≤x≤1) Nanolayers Grown by Atomic Layer Deposition on GaSb and GaAs (001) Oriented Substrates [J] . Joel Díaz-Reyes, Roberto Saúl Castillo-Ojeda, José Eladio Flores-Mena 电子科技学刊：英文版 . 2019,第002期

机译：GaSb和GaAs（001）取向基板上原子层沉积生长的Cd1-xZnxTe（0≤x≤1）纳米层的表征
4. Isolation and characterization of large-area GaSb membranes grown on GaAs substrates [C] . Renteria E.J., Ahirwar P., Clark S.P.R., IEEE Photovoltaic Specialists Conference . 2013

机译：GaAs基材上生长的大面积喘气膜的隔离与表征
5. Reducing Threading Dislocation in GaSb Epilayer Grown on GaAs Substrate for Photovoltaic and Thermophotovoltaic Application [D] . Mansoori, Ahmad. 2019

机译：减少在GaAs底物上生长在GaAs底物上的喘气脱位，用于光伏和蒸煮器应用
6. Electrical Properties of Midwave and Longwave InAs/GaSb Superlattices Grown on GaAs Substrates by Molecular Beam Epitaxy [O] . D. Benyahia, Ł. Kubiszyn, K. Michalczewski, 2018

机译：GaAs衬底上分子束外延生长的中波和长波InAs / GaSb超晶格的电学性质
7. Characterization of 6.1 Å III-V materials grown on GaAs and Si: a comparison of GaSb/GaAs epitaxy and GaSb/AlSb/Si epitaxy [O] . Craig Adam, Carrington Peter James, Liu Huiyun, 2016

机译：GaAs和Si上生长的6.1ÅIII-V材料的特性：GaSb / GaAs外延和GaSb / AlSb / Si外延的比较

Isolation and characterization of large-area GaSb membranes grown on GaAs substrates

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