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Hybrid multi-layer graphene/Si Schottky junction solar cells

机译:混合多层石墨烯/ Si肖特基结太阳能电池

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Hybrid Graphene/Si Schottky junction solar cells are inexpensive alternatives for photovoltaics due to easy and rapid fabrication processes. However, one of the main challenges for graphene-based Schottky junction solar cells is the large sheet resistance of single-layer graphene, leading to low fill factor. Here, we demonstrate multi-layer graphene-based Schottky junction solar cell, which are prepared by stacking monolayer graphene via a chemical vapor deposition (CVD) method on copper foils. The objectives are to improve charge transport and decrease the series resistance of the hybrid solar cell. We present the Raman spectrum results of monolayer graphene and stacked multilayer graphene films, and observe no bonding interaction between the stacked layers. For the optical and electrical properties, the sheet resistance of stacked multilayer graphene is reduced from 3000Ω/sq to 1500Ω/sq and 750Ω/sq with two and three layers, respectively. The reduction of the sheet resistance approaches the properties of highly-oriented pyrolytic graphite (HOPG) when the layer number is more than five. Moreover, from the optical transmittance measurement, the absorption of a monolayer graphene is about 3% at the 555 nm wavelength, giving rise to a transmittance of 90% for triple-layer graphene. The hybrid silicon solar cell with a single-layer graphene achieves a power conversion efficiency of 0.9% with a short-circuit current of 8.75 mA/cm2, open-circuit voltage of 0.25V, and fill factor of 39%. The external quantum efficiency measurement reveals an integrated photocurrent of 18.3 mA/cm2, which further confirms the potential of the hybrid photovoltaic approach. Device fabrication with multi-layer graphene is still in process, and more data will be presented. Other characterization techniques such as capacitance-voltage and capacitance-frequency measurements will be taken to analyze the performance of the single- and multilayer graphe- e solar cells.
机译:石墨烯/硅肖特基混合结太阳能电池由于制造工艺简单,快速而成为光伏的廉价替代品。然而,基于石墨烯的肖特基结太阳能电池的主要挑战之一是单层石墨烯的大薄层电阻,从而导致较低的填充系数。在这里,我们演示了基于石墨烯的多层肖特基结太阳能电池,该电池是通过将化学气相沉积(CVD)方法将单层石墨烯堆叠在铜箔上而制备的。目的是改善电荷传输并降低混合太阳能电池的串联电阻。我们提出了单层石墨烯和堆叠的多层石墨烯薄膜的拉曼光谱结果,并观察到在堆叠的层之间没有键合相互作用。对于光学和电学性能,堆叠的多层石墨烯的薄层电阻分别由两层和三层从3000Ω/ sq减小到1500Ω/ sq和750Ω/ sq。当层数大于五时,薄层电阻的降低接近高取向热解石墨(HOPG)的特性。此外,从光学透射率测量,单层石墨烯在555nm波长处的吸收约为3%,从而使三层石墨烯的透射率为90%。具有单层石墨烯的混合硅太阳能电池的短路电流为8.75 mA / cm 2 ,开路电压为0.25V,填充系数达到0.9%的功率转换效率占39%。外部量子效率测量显示出18.3 mA / cm 2 的积分光电流,这进一步证实了混合光伏方法的潜力。多层石墨烯的器件制造仍在进行中,将提供更多数据。将采用其他表征技术,例如电容电压和电容频率测量来分析单层和多层石墨太阳能电池的性能。

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